Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Po Keong Ng"'
Autor:
Benjamin Edlavitch, Alan Feinerman, Ashley N. Selner, Koushik Banerjee, Julie Chang, Daminabo Harry, Benjamin Salvador, Po Keong Ng, Alex Benison, Rafael Razo, Mark Harris, Nithya Jayapratha, Rade Kuljic, Sphurthi Kanneganti, Kathleen M. Broughton, Qilu He, Tatjana Dankovic, Matthew L. Cantwell, Brian Kunzer, Heinz H. Busta, Stanley Syerov
Publikováno v:
International Vacuum Nanoelectronics Conference.
Cr/Au meander-shaped resistors were fabricated on 200nm thick square silicon nitride diaphragms on silicon with diaphragm dimensions of 0.775mm, 1.025mm, 1.275mm, 1.775mm, and 2.275mm. At 760Torr, the resistors were heated to about 20°C–60°C abov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd32d2731dde4e8d9eaabf080448e699
https://doi.org/10.1109/ivnc.2010.5563229
https://doi.org/10.1109/ivnc.2010.5563229
Autor:
Chang, J., Jayapratha, N., Kuljic, R., Salvador, B., Cantwell, M., Broughton, K., Kunzer, B., Po Keong Ng, Selner, A., Razo, R., Harris, M., Qilu He, Syerov, S., Harry, D., Kanneganti, S., Benison, A., Edlavitch, B., Dankovic, T., Banerjee, K., Feinerman, A.
Publikováno v:
2010 23rd International Vacuum Nanoelectronics Conference (IVNC); 2010, p215-216, 2p