Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Po Hsien Sung"'
Autor:
Po-Hsien Sung, Tei-Chen Chen
Publikováno v:
Crystals, Vol 10, Iss 6, p 540 (2020)
Due to the rapid increase in current density encountered in new chips, the phenomena of thermomigration and electromigration in the solder bump become a serious reliability issue. Currently, Ni or TiN, as a barrier layer, is widely academically studi
Externí odkaz:
https://doaj.org/article/8596fbe106c644aa952ed9182b2f3499
Autor:
Po Hsien Sung, Tei Chen Chen
Publikováno v:
Coatings, Vol 10, Iss 1087, p 1087 (2020)
Coatings
Volume 10
Issue 11
Coatings
Volume 10
Issue 11
It is well-known that Cu&ndash
Sn intermetallic compounds are easily produced during reflow process and result in poor reliability of solder bump. Recently, amorphous metallic films have been considered to be the most effective barrier layer bec
Sn intermetallic compounds are easily produced during reflow process and result in poor reliability of solder bump. Recently, amorphous metallic films have been considered to be the most effective barrier layer bec
Autor:
Po-Hsien Sung, Marwan Wang, Ian Hu, Meng-Kai Shih, Avis Feng, Shouyi Chin, CP Hung, David Tarng, Penny Yang
Publikováno v:
International Symposium on Microelectronics. 2018:000110-000114
Recently, high speed communication packages require much larger chip sizes and the increased ball/lead counts (>3000), in order to meet high input/output (I/O) functionality, requires large size substrate (>50×50 mm2) to content it. Comparing with c
Autor:
Po Hsien Sung, Tei Chen Chen
Publikováno v:
Computational Materials Science. 114:13-17
The crack growth and propagation of pre-cracked NiAl alloy prepared at different quenching rates under mode I loading conditions were investigated using molecular dynamics (MD) simulation based on the many-body embedded atom method (EAM) potential. T
Autor:
Tei Chen Chen, Po-hsien Sung
Publikováno v:
DEStech Transactions on Computer Science and Engineering.
Amorphous metallic films have been considered to be the most effective barriers layer for Cu metallization due to the absence of grain boundaries and immiscibility with copper. The time and cost required for nano-scale experimant may be exceedingly l
Publikováno v:
2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC).
In this study, the mechanical responses including warpage and die stress were compared between different packages, naming flip-chip, core-less flip-chip, core-less molded flip-chip, fan-out, exposed-die fan-out, and back-side protective fan-out. All
Autor:
Po Hsien Sung, Tei Chen Chen
Publikováno v:
Computational Materials Science. 102:151-158
The crack growth and propagation of pre-cracked single-crystal nickel under mode I loading conditions are investigated by molecular dynamics simulation based on the many-body tight-binding potential. The effects of temperature, loading rate, and orie
Autor:
Po-Hsien Sung, 宋柏賢
106
This study compares the experimental values with the simulation results of a liquid cooling device having multiple heat sources in various heating modes. For investigating the effect of blocking the channel above the unheated section, two ch
This study compares the experimental values with the simulation results of a liquid cooling device having multiple heat sources in various heating modes. For investigating the effect of blocking the channel above the unheated section, two ch
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6x2qup
Autor:
Shu-Hua Lee, Meng-Kai Shih, Po-Hsien Sung, Tz-Cheng Chiu, Dao-Long Chen, David Tarng, Chih-Pin Hung
Publikováno v:
2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
Characterizations for the comprehensive viscoelastic behaviors of materials were conducted in this research. For considering the multiaxial viscoelastic behaviors of the polymeric constituents in finite element models for package stress and deformati
Publikováno v:
Molecular Simulation. 39:596-601
The plastic response of perfect face-centred cubic single-crystal aluminium (Al) nanowires (NWs) under torsion is studied using molecular dynamics simulations. The Al–Al interaction is described by the many-body tight-binding potential. The effects