Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Po Chun Lai"'
Publikováno v:
IEEE Transactions on Industrial Electronics. 70:8588-8597
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 436-440 (2016)
This paper presents a new 2-D/3-D switchable pixel circuit based on low-temperature polycrystalline-silicon thin-film transistors (TFTs) at a frame rate of 240 Hz for active-matrix organic light-emitting diode (OLED) displays. The proposed circuit co
Externí odkaz:
https://doaj.org/article/5abf8d21833448578651ede139686333
Publikováno v:
Proceedings of the International Display Workshops. :493
Publikováno v:
Proceedings of the International Display Workshops. :497
Publikováno v:
Proceedings of the International Display Workshops. :489
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1448-1451
Autor:
Po-Chun Lai, Lin Tsu-Yuan, Po-Cheng Lai, Tsang-Hong Wang, Kuang-Hsiang Liu, Li-Wei Shih, Chia-Che Hung, Chih-Lung Lin
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:489-500
This paper proposes a new pixel circuit using low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) for use in mobile active matrix organic light-emitting diode (AMOLED) displays. The purpose of a pixel circuit is to supply stable
Publikováno v:
IEEE Transactions on Electron Devices. 66:436-444
This paper proposes amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) four-transistor-two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic
Publikováno v:
IEEE Transactions on Electron Devices. 65:3577-3581
This brief suppresses threshold voltage ( ${V}_{\text {TH}}$ ) variations in low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) with a new current scaling ratio modulation method for the application of active-matrix organic lig
Publikováno v:
IEEE Transactions on Industrial Electronics. 65:3585-3591
This paper proposes a new hydrogenated amorphous silicon thin-film-transistor-based (a-Si:H TFT-based) gate driver circuit that uses the time-division driving method to ameliorate the display-to-touch crosstalk. The proposed work utilizes a rechargin