Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Po Chen Chiu"'
Autor:
Su-Lin Lee, Chih-Chien Chou, Hsiao-Ching Chuang, En-Chi Hsu, Po-Chen Chiu, Samuel K Kulp, John C Byrd, Ching-Shih Chen
Publikováno v:
PLoS ONE, Vol 8, Iss 6, p e67149 (2013)
Although the rictor-mTOR complex (mTORC2) has been shown to act as phosphoinositide-dependent kinase (PDK)2 in many cell types, other kinases have also been implicated in mediating Ser473-Akt phosphorylation. Here, we demonstrated the cell line speci
Externí odkaz:
https://doaj.org/article/b2c8fdea46454f19ba16c77a553e7492
Autor:
Yi-Ting Chen, Po-Chen Chiu, Chia-Wei Liao, Chih-Hao Chang, Yun Chi, Pi-Tai Chou, Deng-Gao Chen, Yi-An Chen, Chi-Lin Chen, Gene-Hsiang Lee, Tzu-Chieh Lin, Yi-Jyun Lien
Publikováno v:
ACS Applied Materials & Interfaces. 10:12886-12896
We report the unprecedented dual properties of excited-state structural planarization and thermally activated delayed fluorescence (TADF) of 10-dimesitylboryl phenoxazine, i.e., PXZBM. Bearing a nonplanar phenoxazine moiety, PXZBM shows the lowest ly
Publikováno v:
ECS Meeting Abstracts. :1931-1931
Three-dimensional integrated circuit (3D-IC) technology has been used for vertical integration of multi-chip or stacked process in three-dimensional space for the scaling trend of sub-1 nm technical node, in order to overcome the physical limits of e
Autor:
Dian Luo, Hai-Ching Su, Po Chen Chiu, Tsung Che Chiang, Chi Hao Chan, Shun Wei Liu, Chia Hao Ku, Jhih Yan Guo, Hao Hsuan Chiu, Chih-Hao Chang
Publikováno v:
Organic Electronics. 85:105844
Considering a device structure consisting of multi-stacked layers with different refractive indices, we proposed a composite electrode to diminish total internal reflection, thereby improving the out-coupling efficiency of organic light-emitting diod
Autor:
Yan-Lin Li, Jiayi Huang, Po-Chen Chiu, Dun-Bao Ruan, Guan-Ting Liu, Kuei-Shu Chang-Liao, Zi-Qin Hong, Shih-Han Yi
Publikováno v:
Microelectronic Engineering. 216:111034
Germanium (Ge) is a promising channel material to replace silicon (Si) for the sub-10 nm CMOS technology node. However, the realization of Ge-based MOSFET may be limited by its poor reliability characteristics. In addition, radiation exposure on MOSF
Autor:
Yan-Lin Li, Guan-Ting Liu, Po-Chen Chiu, Ji-Syuan Li, Shih-Han Yi, Dun-Bao Ruan, Kuei-Shu Chang-Liao
Publikováno v:
Microelectronic Engineering. 215:111025
In order to reduce bombardment or chemical etching damage of Ge pMOSFET treated by F-based plasma, an additional O2 or/and N2 plasma treatment was applied on the high-k gate dielectric in this work. The sample treated by F-based plasma followed with
Autor:
En-Chi Hsu, Samuel K. Kulp, Po Chen Chiu, Ching-Shih Chen, John C. Byrd, Su-Lin Lee, Hsiao Ching Chuang, Chih-Chien Chou
Publikováno v:
PLoS ONE, Vol 8, Iss 6, p e67149 (2013)
Although the rictor-mTOR complex (mTORC2) has been shown to act as phosphoinositide-dependent kinase (PDK)2 in many cell types, other kinases have also been implicated in mediating Ser473-Akt phosphorylation. Here, we demonstrated the cell line speci