Impact of the interface on the paraelectric-to-ferroelectric phase transition in epitaxial BaSrTiO_tn3 thin film capacitors

Autor: Plonka, Rafael.

Techn. Hochsch., Diss., 2007--Aachen.

Externí odkaz: http://darwin.bth.rwth-aachen.de/opus3/volltexte/2008/2392/
http://d-nb.info/1000127257/34
http://nbn-resolving.de/urn:nbn:de:hbz:82-opus-23923

Impact of the interface on the paraelectric to ferroelectric phase transition in expitaxial BaSrTiO 3 thin film capacitors

Autor: Plonka, Rafael

Publikováno v: Jülich : Forschungszentrum Jülich, Zentralbibl., Verl. [u.a.], Berichte des Forschungszentrums Jülich 4266, X, 116 S. : graph. Darst. (2007). = Zugl.: Aachen, Techn. Hochsch., Diss., 2007

The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a drastic reduction of the area of the incorporated storage capacitors. As a consequence, the film thickness of the used dielectrics has to be decreased

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______791::d000af1943ff1eeddc68ecf7c825cd50
https://publications.rwth-aachen.de/record/51300