Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Plimmer, S.A."'
Autor:
Plimmer, S.A., David, J.P.R., Rees, G. J., Grey, R., Herbert, D. C., Wight, D. R., Higgs, A. W.
Publikováno v:
Journal of Applied Physics; 8/1/1997, Vol. 82 Issue 3, p1231, 5p, 2 Charts, 5 Graphs
The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::ef4c68d0c8a21cbb9b70e7d1c89933b4
https://eprints.whiterose.ac.uk/900/1/davidjpr9.pdf
https://eprints.whiterose.ac.uk/900/1/davidjpr9.pdf
The avalanche multiplication characteristics of Al0.8Ga 0.2As have been investigated in a series of p-i-n and n-i-p diodes with i-region widths, w, varying from 1 μm to 0.025 μm. The electron ionization coefficient, α, is found to be consistently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::85303c55a0442b89ed33e9ae6bf67eab
https://eprints.whiterose.ac.uk/905/1/davidjpr14.pdf
https://eprints.whiterose.ac.uk/905/1/davidjpr14.pdf
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ diodes, with avalanche region thickness, w ranging from 0.026 μm to 0.85 μm. The results show that the ionization coefficient for electrons is sligh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::9924d19e366113f586deb27132848c67
https://eprints.whiterose.ac.uk/906/1/davidjpr15.pdf
https://eprints.whiterose.ac.uk/906/1/davidjpr15.pdf
Electron and hole multiplication characteristics, Me and Mh, have been measured in AlxGa1-xAs (x=0-0.60) homojunction p+-i-n+ diodes with i-region thicknesses, w, from 1 μm to 0.025 μm and analyzed using a Monte Carlo model (MC). The effect of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::2a459192ca5d9095e565993a67b643b2
https://eprints.whiterose.ac.uk/909/1/davidjpr18.pdf
https://eprints.whiterose.ac.uk/909/1/davidjpr18.pdf
Multiplication measurements on GaAs p+-i-n+s with i-region thicknesses, w, between 1 μm and 0.025 μm and Monte Carlo (MC) calculations of the avalanche process are used to investigate the applicability of the local ionization theory. The local expr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::a14f2354a94bc4d7f953823941cabd20
https://eprints.whiterose.ac.uk/908/1/davidjpr17.pdf
https://eprints.whiterose.ac.uk/908/1/davidjpr17.pdf
Autor:
Li, K.F., Ong, D.S., David, J.P.R., Tozer, R.C., Rees, G.J., Plimmer, S.A., Chang, K.Y., Roberts, J.S.
It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multipli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::7576831c288122a0ec070f614d61689a
https://eprints.whiterose.ac.uk/907/1/davidjpr16.pdf
https://eprints.whiterose.ac.uk/907/1/davidjpr16.pdf
Publikováno v:
IEE Proceedings -- Optoelectronics. Apr2003, Vol. 150 Issue 2, p167. 4p. 6 Graphs.
Autor:
Plimmer, S.A., David, J.P.R.
Publikováno v:
IEEE Transactions on Electron Devices. Apr99, Vol. 46 Issue 4, p769. 7p. 1 Chart, 7 Graphs.
Autor:
Plimmer, S.A., David, J.P.R.
Publikováno v:
IEEE Transactions on Electron Devices. Jul96, Vol. 43 Issue 7, p1066. 7p. 6 Black and White Photographs, 1 Chart, 6 Graphs.