Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films

Autor: Fogarassy, E ^{a, *}, de Unamuno, S ^a, Legagneux, P ^b, Plais, F ^b, Pribat, D ^b, Godard, B ^c, Stehle, M ^c

Publikováno v: In Thin Solid Films 1999 337(1):143-147

Two-Dimensional Numerical Analysis of Electrical Characteristics of Polysilicon Thin-Film Transistors

Autor: Valdinoci, M., Colalongo, Luigi, Baccarani, G., Pecora, A., Policicchio, I., Fortunato, G., Plais, F., Legagneux, P., Reita, C., Pribat, D.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3662::97eb24b3442fc7c6ec6f67db5993cc81
http://hdl.handle.net/11379/160486

InP MISFETs with SiO/sub 2/ gate insulator deposited by distributed electron cyclotron resonance plasma deposition.

Autor: Tardy, J., Thomas, I., Viktorovitch, P., Drouot, V., Agius, B., Plais, F., Dupin, J.P., Barbier, D.

Publikováno v: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog & Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics & Smart Pixels; 1992, p306-309, 4p

Low temperature deposition of SiO/sub 2/ on InP substrates by DECR PECVD.

Autor: Plais, F., Agius, B., Proust, N., Cassette, S., Ravel, G., Puech, M.

Publikováno v: Proceedings 1991 Third International Conference Indium Phosphide & Related Materials; 1991, p547-550, 4p

High Quality Polycrystalline Thin Films Transistors Made by Excimer Laser Crystallisation.

Autor: Legagneux, P., Petinot, F., Huet, O., Plais, F., Reita, C., Pribat, D., Carluccio, R., Pecora, A., Mariucci, L., Fortunato, G.

Publikováno v: ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference; 1996, p1071-1074, 4p