Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Pja Peter Thijs"'
Autor:
Josselin Pello, MK Meint Smit, van der Jjgm Jos Tol, Hpmm Huub Ambrosius, Pja Peter Thijs, F. Bordas, R Rui Zhang, Gunther Roelkens, F Fouad Karouta
Publikováno v:
IET Optoelectronics, 5(5), 218-225. Institution of Engineering and Technology (IET)
A new photonic integration technique is presented, which enables the use of indium-phosphide-based membranes on top of silicon chips. This can provide the electronic chips (complementary metal-oxide semiconductor (CMOS)) with an added optical layer (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c48948cec4fab881ec1005a37ad8f89c
https://research.tue.nl/en/publications/a712ab3a-04af-4b00-9774-e1b46c2c8b09
https://research.tue.nl/en/publications/a712ab3a-04af-4b00-9774-e1b46c2c8b09
Autor:
Hadi Rabbani-Haghighi, P.J. van Veldhoven, MK Meint Smit, Erwin Bente, Pja Peter Thijs, Sylwester Latkowski
Publikováno v:
2013 IEEE Photonics Conference.
Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07μm and 3dB bandwidth up to 27nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ad80d4630aaddf994d6f370aee7c07c
https://doi.org/10.1109/ipcon.2013.6656534
https://doi.org/10.1109/ipcon.2013.6656534
Autor:
E.J. Jansen, LH Spiekman, MK Meint Smit, Pja Peter Thijs, van T Dongen, Jjm Hans Binsma, BH Verbeek, Aam Toine Staring
Publikováno v:
Integrated Photonics Research.
Wavelength Division Multiplexing (WDM) is widely regarded as a promising option to increase the bandwidth and flexibility of broadband optical communication systems. In such systems, multi wavelength laser sources [I], both for selectable single wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da6ccb17056b38f2502bfd9101abec2
https://doi.org/10.1364/ipr.1996.img3
https://doi.org/10.1364/ipr.1996.img3
Publikováno v:
Journal of Crystal Growth, 74(3), 625-634. Elsevier
InP was grown on (001) and (111)B InP substrates by the supercooling and step-cooling technique and In 1- x Ga x As y P 1- y ( x ≈ 0.2 and y ≈ 0.5) was grown on (001), (111)A and (111)B InP substrates at 640-650δC by the step-cooling technique.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5beddf61baf2e899a75008d177ba3128
https://doi.org/10.1016/0022-0248(86)90209-5
https://doi.org/10.1016/0022-0248(86)90209-5