Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Piyush Bhatt"'
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Publikováno v:
Recent patents on nanotechnology. 16(4)
Hydrothermal method was used to prepare TiOX-ray diffraction was used to study the structural properties of prepared samples. Anatase and Rutile phases of TiOBecause of the high refractive index photons can stay for longer period of time inside the m
Autor:
Prathmesh Deshmukh, Piyush Bhatt, G. Umesh, Shourie Ranjana J. Bhatt, M. N. Satyanarayan, S. S. Prabhu, Bagvanth Reddy Sangala
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 37:795-804
We have demonstrated the possibility of employing a device, designed to operate at terahertz (THz) frequencies, for sensing materials. The device consists of a waveguide section with a pair of stubs located at the middle and oriented transversely to
Autor:
Jayeeta Biswas, Aneesh Nainani, P. Swarnkar, Saurabh Lodha, Piyush Bhatt, Abhishek Kumar Misra, Christopher Hatem
Publikováno v:
IEEE Transactions on Electron Devices. 62:69-74
In this paper, we present a detailed study of temperature-based ion implantation of phosphorus dopants in Ge for varying dose and anneal conditions through fabricated n+/p junctions and n-type MOSFETs (nMOSFETs). In comparison with room temperature (
Autor:
Appaso M. Gadade, Piyush Bhatt
Publikováno v:
Journal of Physics: Conference Series. 1240:012026
The present work proposes a computational procedure for evaluating the homogenized property of laminated composite plate. This type of model is beneficial for determining the basic mechanical properties of a laminated composite with significantly les
Publikováno v:
IEEE Electron Device Letters. 35:717-719
We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion implantation process. High activation >4 x 10(20) cm(-3) results in specific contact resistivity of 1.7 x 10(-8) Omega-cm(2) on p(+)-Ge, which is clos
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Autor:
S. S. Prabhu, Piyush Bhatt, M. N. Satyanarayan, J Shourie Ranjana, Prathmesh Deshmukh, Bagvanth Reddy Sangala, G. Umesh
Publikováno v:
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
We demonstrate the sensing capability of InSb based planar THz waveguide with stubs, which can sense biomolecules of a few micro liter quantity in de-ionized (DI) water. We chose Bovine Serum Albumin (BSA), a well-known standard protein molecule to i
Autor:
Harshad Surdi, G. Umesh, S. S. Prabhu, M. N. Satyanarayan, Piyush Bhatt, J Shourie Ranjana, Bagvanth Reddy Sangala
Publikováno v:
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
Publikováno v:
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).
This work compares the impact of implantation temperature ranging from cryogenic (-100 °C) to hot (400°C) on the performance of n + /p Ge junctions. Cryogenic implantation on bulk, planar Ge followed by a 400°C rapid thermal anneal leads to higher