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pro vyhledávání: '"Piyasan Prasertthdam"'
Autor:
Chiraporn Tongyam, Patchareewan Prongjit, Piyasan Prasertthdam, Somchai Ratanathammaphan, Somsak Panyakeow, Samatcha Vorathamrong
Publikováno v:
Advanced Materials Research. 1131:16-19
The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0c056ce953df0e19417f092d82d6bb
https://doi.org/10.4028/www.scientific.net/amr.1131.16
https://doi.org/10.4028/www.scientific.net/amr.1131.16
