Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Piyas Samanta"'
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 7, p1-8, 8p, 1 Chart, 14 Graphs
Autor:
Krishna C. Mandal, Piyas Samanta
Publikováno v:
Solid-State Electronics. 114:60-68
Hole injection into silicon dioxide (SiO2) films (8–40 nm thick) is investigated for the first time during substrate electron injection via Fowler–Nordheim (FN) tunneling in n-type 4H- and 6H–SiC (silicon carbide) based metal–oxide–semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac50e93f84fbec150937aa7d5a92af02
https://doi.org/10.1016/j.sse.2015.07.009
https://doi.org/10.1016/j.sse.2015.07.009
Autor:
Piyas Samanta
Publikováno v:
Journal of Vacuum Science & Technology B. 37:062204
A capacitance-voltage (C–V) based efficient methodology is demonstrated for precise estimation of process-induced various fixed charge distributions in the dielectric layer, interface trapped charges at the silicon/oxide interface, and the effectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c27f57cd53559e425b333460b7916af
https://doi.org/10.1116/1.5120268
https://doi.org/10.1116/1.5120268
Autor:
Piyas Samanta
Publikováno v:
Semiconductor Science and Technology. 34:115008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b6144316b812b0efcaca3cbce2a554
https://doi.org/10.1088/1361-6641/ab4375
https://doi.org/10.1088/1361-6641/ab4375
Autor:
Krishna C. Mandal, Piyas Samanta
Publikováno v:
SPIE Proceedings.
We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2a3ccdd42be01515cf924a076ddbbc
https://doi.org/10.1117/12.2238875
https://doi.org/10.1117/12.2238875
Publikováno v:
Microelectronics Reliability
We compare charge carrier generation/trapping related degradation in control oxide (SiO 2 ) and HfO 2 /SiO 2 stack of an identical equivalent-oxide-thickness (EOT) during constant gate voltage stress of n-type metal-oxide-semiconductor (nMOS) capacit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c35c8a88fe6a4cfe90d50d6d82db63e
https://doi.org/10.1016/j.microrel.2010.07.005
https://doi.org/10.1016/j.microrel.2010.07.005
Publikováno v:
Microelectronic Engineering. 86:1767-1770
We have investigated electrical stress-induced positive charge buildup in a hafnium aluminate (HfAlO)/silicon dioxide (SiO"2) dielectric stack (equivalent oxide thickness=2.63nm) in metal-oxide-semiconductor (MOS) capacitor structures with negative b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf8a99ce0873ed02334a30c42c5d24b
https://doi.org/10.1016/j.mee.2009.03.002
https://doi.org/10.1016/j.mee.2009.03.002
Publikováno v:
Microelectronic Engineering. 84:1964-1967
We have investigated electrical stress-induced charge carrier generation/trapping in a 4.2 nm thick (physical thickness T"p"h"y) hafnium oxide (HfO"2)/silicon dioxide (SiO"2) dielectric stack in metal-oxide-semiconductor (MOS) capacitor structures wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdef5ba6accd0532c0ec5a018e32be40
https://doi.org/10.1016/j.mee.2007.04.084
https://doi.org/10.1016/j.mee.2007.04.084
Autor:
Chunxiang Zhu, Piyas Samanta, Qingchun Zhang, Alain Chun Keung Chan, Mansun Chan, Tsz Yin Man
Publikováno v:
Semiconductor Science and Technology. 21:1393-1401
A comprehensive analysis of the stress-induced leakage current (SILC) through thermally grown ultrathin silicon dioxide (SiO2) films has been presented based on experimental observations. Stressing and sensing measurements are done in tantalum nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84606f9381dfb4416d9c7276a8a7bf5
https://doi.org/10.1088/0268-1242/21/10/004
https://doi.org/10.1088/0268-1242/21/10/004
Autor:
Piyas Samanta, Mansun Chan
Publikováno v:
Journal of Applied Physics. 96:1547-1555
An exhaustive theoretical investigation on the role of gate material as well as commonly used metal deposition processes [viz., electron beam (e-beam) evaporation and thermal evaporation] on high-field stress-induced dielectric breakdown and∕or deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e2a1d56a47525446eac75a25ee8c28
https://doi.org/10.1063/1.1766094
https://doi.org/10.1063/1.1766094