Zobrazeno 1 - 10
of 223
pro vyhledávání: '"Pirouz Pirouz"'
Autor:
Wang, Shanling, Pirouz, Pirouz
Publikováno v:
In Acta Materialia 2007 55(16):5515-5525
Autor:
Wang, Shanling, Pirouz, Pirouz
Publikováno v:
In Acta Materialia 2007 55(16):5500-5514
Autor:
Wang, Shanling, Pirouz, Pirouz
Publikováno v:
In Acta Materialia 2007 55(16):5526-5537
Publikováno v:
Philosophical Magazine. 93:1351-1370
In this study, a particular nickel-based superalloy has been studied by transmission electron microscopy and the results are discussed in terms of phase transformations that may have taken place. The alloy has been found to consist of three major pha
Weak-beam electron microscopy has been applied to study the dissociation of dislocations in a type II a diamond. Dislocations with Burgers vector ½[11̅0] on (111) glide planes have been found to be dissociated into two Shockley partials, with separ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96d5dbffbb390fc445ffc3837e34f956
https://ora.ox.ac.uk/objects/uuid:521396ea-06b6-4168-a990-848765166c0d
https://ora.ox.ac.uk/objects/uuid:521396ea-06b6-4168-a990-848765166c0d
Autor:
Pirouz Pirouz
Publikováno v:
physica status solidi (a). 210:181-186
Degradation of 4H-SiC PiN diodes – a rapid increase in the forward voltage drop with operation time – has been a focus of research since it was first reported over a decade ago. It was soon discovered that associated with this degradation is a ra
Autor:
Pirouz Pirouz, Augustinas Galeckas
Publikováno v:
ECS Transactions. 41:225-236
Degradation of 4H-SiC PiN diodes - a rapid increase in the forward voltage drop with operation time - has been a focus of research since it was observed a decade ago. A combination of electrical studies and microstructural characterization of the dio
Autor:
Pirouz Pirouz, Leonardus B. Bayu-Aji
Publikováno v:
physica status solidi (a). 207:1190-1195
Deformation experiments were conducted on monocrystalline InP by 4-point bend tests as well as by conventional and depth-sensing indentation (DSI) tests. Temperature ranges where the material exhibited a brittle or a ductile behavior were investigate
Publikováno v:
Journal of Electronic Materials. 37:672-680
This article presents cross-sectional transmission electron microscopy and molten-potassium hydroxide etching studies of (111) 3C-SiC diodes which we previously reported to be free of forward-voltage drift despite abundant electroluminescent linear f