Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Piotr Firek"'
Autor:
Piotr Firek, Elżbieta Czerwosz, Halina Wronka, Sławomir Krawczyk, Mirosław Kozłowski, Mariusz Sochacki, Dorota Moszczyńska, Jan Szmidt
Publikováno v:
Energies, Vol 17, Iss 13, p 3261 (2024)
The objective of this paper is to evaluate the effect of a nanostructured C-Pd film deposited in the gate area of a field-effect transistor (FET) with a carbon–palladium composite gate (C-Pd/FET) on the hydrogen-sensing properties of the transistor
Externí odkaz:
https://doaj.org/article/531bf548cd3a48c29a545f781d2938e9
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This work presents results of investigations of electronic properties of undoped boron nitride (BN) films produced on Si substrates in the course of radio frequency (rf) PACVD process with boron triethyl (C2H5)3B as the boron source. The influence of
Externí odkaz:
https://doaj.org/article/b6ea467f31074ad6a46680a847f8e96f
Autor:
Piotr Firek, Jan Szmidt
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MIS
Externí odkaz:
https://doaj.org/article/2a8c13a518584f34b5361e4bbac81798
Publikováno v:
International Journal of Electronics and Telecommunications, Vol vol. 67, Iss No 1, Pp 23-28 (2021)
The method of cleaning the ISFET structures after application of a biological substance was developed. There are few references in the literature to cleaning methods of this type of structure for biological applications, but they are relatively compl
Externí odkaz:
https://doaj.org/article/7b935c05358c4b4883917fd38725ad6e
Publikováno v:
Metrology and Measurement Systems, Vol 27, Iss 2, Pp 313-321 (2020)
ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sen
Externí odkaz:
https://doaj.org/article/672bc2632a224230ab204fb523905160
Autor:
Sylwia Terpilowska, Stanislaw Gluszek, Elzbieta Czerwosz, Halina Wronka, Piotr Firek, Jan Szmidt, Malgorzata Suchanska, Justyna Keczkowska, Bozena Kaczmarska, Mirosław Kozlowski, Ryszard Diduszko
Publikováno v:
Materials, Vol 15, Iss 17, p 5826 (2022)
The application of nano-Ag grains as antiviral and antibacterial materials is widely known since ancient times. The problem is the toxicity of the bulk or big-size grain materials. It is known that nano-sized silver grains affect human and animal cel
Externí odkaz:
https://doaj.org/article/020726ac087f4f40beb122491393e541
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) film grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry
Externí odkaz:
https://doaj.org/article/bd44913c17fb442184577ed1d89406b5
Publikováno v:
Circuit World, 2016, Vol. 42, Issue 1, pp. 37-41.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/CW-10-2015-0055
Publikováno v:
Microelectronics International. 37:103-107
Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30daa88d02d50222ad31be923e445e18
https://doi.org/10.1108/mi-11-2019-0074
https://doi.org/10.1108/mi-11-2019-0074
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:38-41
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40018bcab4e9312c7e15d3ecd1569be7
https://doi.org/10.15199/13.2019.12.7
https://doi.org/10.15199/13.2019.12.7