Výsledky vyhledávání - "Pinquier, C."

Akademický článek

Autor: Pinquier, C., Lesouef, J.

Publikováno v: In EMC - AKOS - Trattato di Medicina December 2016 18(4):1-6

Akademický článek

Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Autor: Simeonov, D., Feltin, E., Demangeot, F., Pinquier, C., Carlin, J.-F., Butté, R., Frandon, J., Grandjean, N.

Publikováno v: In Journal of Crystal Growth 2007 299(2):254-258

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Akademický článek

Raman scattering in InN films and nanostructures

Autor: Pinquier, C., Demangeot, F., Frandon, J., Briot, O., Maleyre, B., Ruffenach, S., Gil, B., Pomeroy, J., Kuball, M., Hubel, H., van Uden, N., Dunstan, D.

Publikováno v: In Superlattices and Microstructures 2004 36(4):581-589

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Strain-induced correlations between the phonon frequencies of indium nitride

Autor: Briot, Olivier, Gil, Bernard, Maleyre, B., Ruffenach, Sandra, Pinquier, C., Demangeot, François, Frandon, J.

Publikováno v: INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES III (PLMCN3)
3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3)
3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1420-1424

International audience; Using measurements of phonons frequencies in large size InN quantum dots deposited by Metal-organic vapor phase epitaxy, we found these frequencies to experience a blue shift with increasing compression. Next we show that all

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::094308937f1a4e00779156f6444b44ed
https://hal.archives-ouvertes.fr/hal-00539944

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The value of the direct bandgap of InN: a re-examination

Autor: Briot, Olivier, Maleyre, Benedicte, Ruffenach, Sandra, Gil, Bernard, Pinquier, C., Demangeot, François, Frandon, J.

We report the observation of a broad absorption in the 1.25 eV region that is typical of thin InN films. Such a feature we attribute to light absorption at the energy of the fundamental direct band gap of InN, while we attribute the low energy 650-75

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ec2a84c5f7cc53545febd261969bcb35
https://hal.archives-ouvertes.fr/hal-00540437

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