Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Pinping Sun"'
Publikováno v:
Microwave and Optical Technology Letters. 53:1430-1435
Design and analysis of insertion loss and linearity enhancement technique for PIN diode RF switches are presented.Measurements show a 12.5% insertion loss improvement by optimizing anode-to-cathode distance, a 3.29% reduction of intrinsic resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47398819100c1f04cb3628551fef143c
https://doi.org/10.1002/mop.26022
https://doi.org/10.1002/mop.26022
Publikováno v:
IEEE Transactions on Advanced Packaging. 31:320-325
A new method to reduce the computation time in power/ground-plane analysis is proposed. The proposed method is based on an approximation of impedance in the frequency domain using Mobius transform. The power/ground plane impedance is transformed by M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07800a7a73a2f9933fb3454a4fe14ba7
https://doi.org/10.1109/tadvp.2008.920640
https://doi.org/10.1109/tadvp.2008.920640
Publikováno v:
IEEE Microwave and Wireless Components Letters. 20:37-39
This letter presents a fully integrated highly linear 4-bit SiGe PIN diode phase shifter MMIC for Ku-band phase-array application in the standard SiGe BiCMOS process. High-performance customized SiGe PIN diode switches are employed for high linearity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9668527015ce71bda110126313e1369a
https://doi.org/10.1109/lmwc.2009.2035962
https://doi.org/10.1109/lmwc.2009.2035962
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:352-354
A novel octagonal SiGe p-type intrinsic n-type (PIN) diode single pole single throw (SPST) switch is first implemented in a standard 0.18-mum SiGe BiCMOS technology. Distinctive radio frequency performance of monolithic silicon PIN diode switch is ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804849423858333b14545c763d2eb47e
https://doi.org/10.1109/lmwc.2007.895706
https://doi.org/10.1109/lmwc.2007.895706
Publikováno v:
2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03.
A 10-GB/s 1:4 demultiplexer (demux) circuits has been implemented in a standard 0.18-mm CMOS process for optical fiber communication systems. A MOS current-steering (MCS) latch is used in the design of the high-speed D-flip-flops. The circuit operate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70fffb949c8abc9dc25e41b36a29a925
https://doi.org/10.1109/icasic.2003.1277400
https://doi.org/10.1109/icasic.2003.1277400
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
A compact low phase imbalance broadband attenuator has been proposed and fabricated in a standard 0.18-um SiGe BiCMOS process. This inductor-less attenuator takes advantage of high linearity and low junction capacitance of the SiGe PIN (P-type Intrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b973408deac24e30cbbe84c6911f7d
https://doi.org/10.1109/mwsym.2012.6259653
https://doi.org/10.1109/mwsym.2012.6259653
Autor:
Cole E. Zemke, Pinping Sun, Wayne H. Woods, Essam Mina, Barbara S. Dewitt, Nick Perez, Hailing Wang
Publikováno v:
ISQED
This paper presents a novel automated post-layout flow validation tool to intensively test the MOSFETs and passive components in 32nm, 28nm and 22nm Process Design Kits (PDK). Benchmark circuits, such as, ring oscillator, logic circuits and passive d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5822c240b084a3b47b2d1cd149a028e3
https://doi.org/10.1109/isqed.2011.5770769
https://doi.org/10.1109/isqed.2011.5770769
Autor:
J. Rascoe, John J. Pekarik, Hanyi Ding, Guoan Wang, Pinping Sun, Wayne H. Woods, Pascal Tannhof
Publikováno v:
The 40th European Microwave Conference.
A millimeter wave (MMW) on-chip passive frequency-dependent inductor is described with different designed inductance values targeted at different frequency ranges using one device. The proposed frequency-dependent inductor design allows the optimizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bad6d464c962fe73e96ac30d3d05bdf
https://doi.org/10.23919/eumc.2010.5616364
https://doi.org/10.23919/eumc.2010.5616364
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
Analysis of PIN diode's geometric effects on the performance of RF switches is presented with measured data. The impact of periphery-to-area ratio (P/A) is investigated in terms of forward bias resistance and linearity. Theoretical analysis shows the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e9085b8fe53e0bcba24b5c80268b3fb
https://doi.org/10.1109/mwsym.2010.5518266
https://doi.org/10.1109/mwsym.2010.5518266
Publikováno v:
ISCAS
A novel LC VCO employing an adaptive body-bias is proposed for low power and low voltage high performance signal generation. By using the adaptive body-bias technique, the threshold voltage of the cross-coupled pair is reduced, and meanwhile the effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c84c48a6198808911bd50922cfa6571
https://doi.org/10.1109/iscas.2010.5537326
https://doi.org/10.1109/iscas.2010.5537326