Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Pingxi Ma"'
Autor:
Guoxuan Qin, Yei Hwan Jung, Huilong Zhang, Ningyue Jiang, Pingxi Ma, Scott Stetson, Marco Racanelli, Zhenqiang Ma
Publikováno v:
Advanced Electronic Materials. 8:2101350
Publikováno v:
Microelectronics Reliability. 52:2568-2571
The radio frequency (RF) characteristics of proton irradiated large-area silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature of 77 K and high temperature of ∼430 K) are reported
Publikováno v:
Semiconductor Science and Technology. 22:S68-S71
In summary, thermal resistance of SiGe HBT at different power densities is characterized for the first time, revealing the decreasing trend of thermal resistance with increased dissipated power in the devices. The different behavior of thermal resist
Publikováno v:
Semiconductor Science and Technology. 22:S46-S49
The performance of SiGe HBTs has been dramatically improved due to scaling and device structure optimization. This work reports the proton radiation effects on SiGe power HBTs manufactured in a commercial BiCMOS process. Besides DC and small-signal A
Publikováno v:
ECS Transactions. 3:919-925
The effects of proton irradiation on device modeling of SiGe power HBTs are investigated in this work. On-wafer DC, small- signal AC, linearity and large-signal load-pull measurements were performed before and after proton irradiation. Minor degradat
Publikováno v:
IEEE Transactions on Nuclear Science. 53:2361-2366
The effects of proton irradiation on the RF power performance of SiGe power HBTs are, for the first time, reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at fluence
Publikováno v:
Materials Science in Semiconductor Processing. 8:323-326
High-performance SiGe power HBTs are developed using 4-metal industry SiGe BiCMOS platform for 1.9 GHz portable wireless communications. The values of ballasting resistors are carefully selected to ensure thermally stable operation of these devices a
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 51:2175-2180
This paper proposes a new RF circuit configuration: the Bipolar cascoded with a mosFET (BiFET). Applying the BiFET for low-noise amplifiers (LNAs), we have developed a new BiFET-based design methodology. By using this methodology, a BiFET LNA has bee
Publikováno v:
Solid-State Electronics. 45:159-167
An analytical model is presented For quasi-static capacitance of the space-charge region in a p-n junction. The model is valid for realistic junction doping profiles under any bias conditions. It c ...
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:1482-1487
This paper reports our latest progress in developing low-loss and low-crosstalk silicon MMIC interconnects for millimeter-wave applications. The proposed silicon/metal/polyimide (SIMPOL) structure based on multilayer polyimide technology is extremely