Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Pinghui S. Yeh"'
Publikováno v:
Sensors, Vol 21, Iss 14, p 4707 (2021)
Constant light power operation of an ultraviolet (UV) LED based on portable low-cost instrumentation and a monolithically integrated monitoring photodiode (MPD) has been reported for the first time. UV light irradiation has become one of the essentia
Externí odkaz:
https://doaj.org/article/48a556b3e7824b36a68f65a903177f2d
Autor:
Ching-Hua Chen, Jia-Jun Zhang, Chang-Han Wang, Tzu-Chieh Chou, Rui-Xiang Chan, Pinghui S. Yeh
Publikováno v:
Photonics, Vol 7, Iss 3, p 63 (2020)
Ultraviolet (UV) light plays an important role in air/water/surface sterilization now. Maintaining a certain light intensity is often required to attain the targeted effect. In this paper, on-chip power monitoring of a UV-A light-emitting diode (LED)
Externí odkaz:
https://doaj.org/article/51bfb280e4244b8baa96cefbd9b7c3b1
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e86e114ae6b1c8187f88591b6703b978
https://doi.org/10.1117/12.2608660
https://doi.org/10.1117/12.2608660
Autor:
Sheng-Lung Huang, Rajendran Soundararajan, Tzu-Te Yang, Pinghui S. Yeh, Chun-Yi Kuo, Silvano Donati, Teng-I Yang
Publikováno v:
IEEE Photonics Technology Letters. 31:1921-1924
Using a glass-clad Ti:sapphire crystal fiber (CF) as the gain medium, we demonstrate for the first time a diode-pumped, 25-mW tunable laser with a 180-nm tuning range. Active medium is a 2.4-cm long, a-cut Ti:sapphire CF we have drawn with an ellipti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ebeef19155f93f6e5a512855546e954
https://doi.org/10.1109/lpt.2019.2950020
https://doi.org/10.1109/lpt.2019.2950020
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 4707, p 4707 (2021)
Sensors, Vol 21, Iss 4707, p 4707 (2021)
Constant light power operation of an ultraviolet (UV) LED based on portable low-cost instrumentation and a monolithically integrated monitoring photodiode (MPD) has been reported for the first time. UV light irradiation has become one of the essentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cd142fe001832def16a2e1c8710844e
https://pubmed.ncbi.nlm.nih.gov/34300445
https://pubmed.ncbi.nlm.nih.gov/34300445
Publikováno v:
IEEE Photonics Technology Letters. 29:1679-1682
Instead of using a wafer with a bipolar junction transistor n-p-n epitaxial structure, we successfully fabricated AlGaInN-based near-ultraviolet (UV) heterojunction phototransistors (HPTs) on a commercial wafer with a light-emitting-diode (LED) epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8727953eca81646826ac465dad95631
https://doi.org/10.1109/lpt.2017.2743038
https://doi.org/10.1109/lpt.2017.2743038
Publikováno v:
Optics express. 27(21)
Monolithic integration of GaN-based phototransistors and light-emitting diodes (LEDs) is reported. Starting with an LED epitaxial wafer, selective Si diffusion was performed to produce an n–p–i–n structure for the phototransistor. A traditional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95229668550999b48ccdbe982a48325e
https://pubmed.ncbi.nlm.nih.gov/31684241
https://pubmed.ncbi.nlm.nih.gov/31684241
Autor:
Chih-Wei Huang, Yen-Hsiang Huang, Cong Jun Lin, Yu Ting Chen, Wenchang Yeh, Yi-Ting Huang, Pinghui S. Yeh
Publikováno v:
IEEE Photonics Technology Letters. 28:605-608
High-performance InGaN-based p-i-n photodetectors (PDs) were fabricated using a typical light-emitting diode (LED) epitaxial structure and surface texturing. A multiple-quantum-well active-layer structure effectively mitigates the indium clustering p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e8def3fe82d99feff6e78be471067e
https://doi.org/10.1109/lpt.2015.2500272
https://doi.org/10.1109/lpt.2015.2500272
Publikováno v:
Materials Science in Semiconductor Processing. 120:105265
In this study, an etch-stop process was developed using inductively coupled plasma reactive-ion etching for precisely controlling the vertical cavity length of GaN-based devices, such as vertical-cavity surface-emitting lasers (VCSELs) and VCSEL 2D a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f13f6ed41124003deb641eaa17df80d
https://doi.org/10.1016/j.mssp.2020.105265
https://doi.org/10.1016/j.mssp.2020.105265
Autor:
Ching-Chin Huang, Jia-Huan Lin, Pinghui S. Yeh, Meng-Chun Yu, Jia-Rong Fan, Hao-Chung Kuo, Da-Wei Lin, Yen-Chao Liao
Publikováno v:
IEEE Photonics Technology Letters. 26:2488-2491
GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa84bc1923f32b0971df0641cf86a532
https://doi.org/10.1109/lpt.2014.2362297
https://doi.org/10.1109/lpt.2014.2362297