Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ping-hai Hao"'
Publikováno v:
Physical Review B. 50:12230-12233
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::608c94b2dafd62fb1aba7efd6ca68c89
https://doi.org/10.1103/physrevb.50.12230
https://doi.org/10.1103/physrevb.50.12230
Efficient infrared-upconversion luminescence in porous silicon: A quantum-confinement-induced effect
Autor:
Jia-biao Zheng, Wencheng Wang, Xiaoyuan Hou, Ping-hai Hao, Hong-bing Jiang, Xun Wang, Jian Wang, Fulong Zhang
Publikováno v:
Physical Review Letters. 69:3252-3255
We demonstrate for the first time that a porous silicon layer (PSL), which has a bright light-emission band in the range of 500--700 nm, exhibits a strong visible-range luminescence under the illumination of an infrared ultrashort pulsed laser. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39c99303d2f3d3c19e3c8f8a70722e8d
https://doi.org/10.1103/physrevlett.69.3252
https://doi.org/10.1103/physrevlett.69.3252
Publikováno v:
Journal of Applied Physics. 75:651-653
The correlation between the Raman peak shift and the linewidth of porous silicon is studied. The experimental result does not fit with the relationship predicted by the phonon confinement model. By taking into account both the phonon confinement and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c9b9bb3779a6b1bcfeab0bb9831123
https://doi.org/10.1063/1.355808
https://doi.org/10.1063/1.355808
Publikováno v:
Physical Review Letters. 71:1265-1267
In the present work energies of photoluminescent (PL) peaks of porous Si were measured on as-etched samples. It was found that the PL peak energies occur only at or nearly at a series of discrete values and exhibit a «pinning» characteristic. A tig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da075a2b5d27902e821f3564eb692fc2
https://doi.org/10.1103/physrevlett.71.1265
https://doi.org/10.1103/physrevlett.71.1265
Autor:
Hong-bing Jiang, Jian Wang, Xun Wang, Wencheng Wang, Xiaoyuan Hou, Ping-hai Hao, Jia-biao Zheng, Fulong Zhang
Publikováno v:
Physical review. B, Condensed matter. 48(8)
It is demonstrated that the infrared-upconversion luminescence generation from porous silicon, which was considered as an enhanced third-order nonlinear optical effect in our recent work, is anisotropic as the polarization vector of normally incident
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eabffcaf5c0d81d6f4a9b07a350a38f5
https://pubmed.ncbi.nlm.nih.gov/10009086
https://pubmed.ncbi.nlm.nih.gov/10009086
Autor:
You-Hua Qian, Xing-Wei Feng, Da-Ming Huang, Xun Wang, Xiaoyuan Hou, Ping-hai Hao, Liang-Yao Chen, Fulong Zhang
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191cf1922296fcafe6e216c523b7eedf
https://doi.org/10.7567/ssdm.1993.pc-3-3
https://doi.org/10.7567/ssdm.1993.pc-3-3
Autor:
Fu–Long Zhang, Xun Wang, Xing Wei Feng, Da–Ming Huang, Ping–Hai Hao, Xiaoyuan Hou, Y.H. Qian, Liang Yao Chen
Publikováno v:
Japanese Journal of Applied Physics. 33:1937
Porous-Si samples were optically studied by using the photoluminescence, Raman scattering, the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optical constants, and can trap more than 95% of the visible photons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f65f6bf162b8b17c9b64bf27d740e3
https://doi.org/10.1143/jjap.33.1937
https://doi.org/10.1143/jjap.33.1937
Autor:
Jian, Wang, Hong-bing, Jiang, Wen-cheng, Wang, Jia-biao, Zheng, Fu-long, Zhang, Ping-hai, Hao, Xiao-yuan, Hou, Xun, Wang
Publikováno v:
Acta Physica Sinica; Sep1993, Vol. 2 Issue 9, p1-1, 1p