Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Ping-Chuan Chang"'
Autor:
Ping-Chuan Chang, 張品全
93
In this thesis, the Ni/Au (3nm/6nm) thin film is annealed by photo-CVD in oxygen. We find the transmittance spectra of the Ni/Au thin film improve from 65% to 85% at 520nm. Further, we applied the Ni/Au thin film under various annealing condi
In this thesis, the Ni/Au (3nm/6nm) thin film is annealed by photo-CVD in oxygen. We find the transmittance spectra of the Ni/Au thin film improve from 65% to 85% at 520nm. Further, we applied the Ni/Au thin film under various annealing condi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43840187705028686560
Publikováno v:
IEEE Electron Device Letters. 43:252-255
Publikováno v:
Journal of Nanomaterials. 2014:1-4
We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with thi
Autor:
Chia Hao Chen, Kai Hsuan Lee, Sheng Po Chang, Hung-Wei Shiu, Shoou-Jinn Chang, Tse Pu Chen, Kuang Wei Liu, Ping Chuan Chang, Lo-Yueh Chang
Publikováno v:
Science of Advanced Materials. 5:873-880
Publikováno v:
Microelectronic Engineering. 104:105-109
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium l
Publikováno v:
Materials Chemistry and Physics. 134:899-904
InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky
Publikováno v:
Solid-State Electronics. 72:38-43
We report the fabrication of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-MgxNy/GaN as an epitaxial buffer and using SiO2 dielectric by photochemical vapor deposition (Photo-CVD) simultaneous
Publikováno v:
physica status solidi (a). 209:579-584
A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1107-1112
We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristi
Autor:
Ping-Chuan Chang, Cheng-Huang Kuo, Sheng-Joue Young, San-Lein Wu, Tse-Pu Chen, Bohr-Ran Huang, Shoou-Jinn Chang, S. M. Wang
Publikováno v:
IEEE Sensors Journal. 10:1609-1614
We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs