Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ping-Cheng Han"'
Autor:
Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 893-899 (2018)
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate ins
Externí odkaz:
https://doaj.org/article/56af2a5b502a41ebb7cea73bc5646100
Autor:
Huan-Chung Wang, Quang Ho Luc, Po-Chun Chang, Chia-Hsun Wu, Ming-Wen Lee, Yueh-Chin Lin, Kun-Sheng Yang, Jian-You Chen, Chang Fu Dee, Azrul Azlan Hamzah, Ping-Cheng Han, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 66:3441-3446
A GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0fa867cbef75475492c77c874cca29a
https://doi.org/10.1109/ted.2019.2922301
https://doi.org/10.1109/ted.2019.2922301
Autor:
Huan-Chung Wang, Ping-Cheng Han, Quang Ho Luc, Franky Lumbantoruan, Po-Chun Chang, Kun-Sheng Yang, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Yu-Hsuan Ho, Edward Yi Chang, Shih-Chien Liu, Jian-You Chen, Ting-En Hsieh
Publikováno v:
IEEE Electron Device Letters. 39:991-994
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5cbc9fef4918fc75f1c2acce6560f1
https://doi.org/10.1109/led.2018.2825645
https://doi.org/10.1109/led.2018.2825645
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this work, a recess-free thin AlGaN barrier metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with high threshold voltage of 3.19V, high maximum drain current of 716 mA/mm and high breakdown voltage of 906V is demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8c2049fa77df0a22f4a345e4aae0c38
https://doi.org/10.1109/ispsd.2019.8757675
https://doi.org/10.1109/ispsd.2019.8757675
Publikováno v:
2019 Compound Semiconductor Week (CSW).
GaN HEMT is an ideal device for power switching applications. However, owing to the false turn-on issue and the requirements for fail-safe operation for the device to be used for electrical vehicles application, a high threshold voltage normally-off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8bcef928d9fbaa2ffb7a3c3a241365
https://doi.org/10.1109/iciprm.2019.8819304
https://doi.org/10.1109/iciprm.2019.8819304
Autor:
Jian You Chen, Yu-Hsuan Ho, Yueh Chin Lin, Edward Yi Chang, Chia Hsun Wu, Yu Xiang Huang, Ping Cheng Han, Quang Ho Luc
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9783319756042
In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ce30552c4a3d21ab214ecd03828e40d
https://doi.org/10.1007/978-3-319-75605-9_2
https://doi.org/10.1007/978-3-319-75605-9_2
Publikováno v:
ECS Meeting Abstracts. :1458-1458
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) is a promising candidate for high power applications. For simplify circuits design and fail-safe operation, enhancement-modes (E-mode) operation is indispensable for GaN power app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b4bf52725a8e016365f2223726fdc2e
https://doi.org/10.1149/ma2015-01/23/1458
https://doi.org/10.1149/ma2015-01/23/1458