Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ping V. Lin"'
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract The absence of thermalization in certain isolated many-body systems is of great fundamental interest. Many-body localization (MBL) is a widely studied mechanism for thermalization to fail in strongly disordered quantum systems, but it is sti
Externí odkaz:
https://doaj.org/article/646631bfc14348f7a44cda126a8dcbc9
Autor:
Ping V. Lin, Dragana Popović
A study of the temperature (T) and density (n_s) dependence of conductivity \sigma(n_s,T) of a highly disordered, two-dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator transition (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45e9bbfd1d212fd43ab5ad9e3d0efb0d
http://arxiv.org/abs/1412.4148
http://arxiv.org/abs/1412.4148
In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear eviden
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03ef664e7f4252c0a67298a5e1229273
A study of the conductance noise in a two-dimensional electron system (2DES) in Si at low temperatures (T) reveals the onset of large, non-Gaussian noise after cooling from an equilibrium state at a high T with a fixed carrier density n_s. This behav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::177752cfde32dac461d892b5fd95a23b
http://arxiv.org/abs/1210.7838
http://arxiv.org/abs/1210.7838
Publikováno v:
Physical Review B. 80
We report experiments in a large, 2.5 m diameter Fabry-Perot quantum Hall interferometer with two tunneling constrictions. Interference fringes are observed as conductance oscillations as a function of applied magnetic field the Aharonov-Bohm flux th
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer, enclosing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bb582886728c4a0837f76fb4657ad33
http://arxiv.org/abs/0809.0860
http://arxiv.org/abs/0809.0860