Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Ping K. Ko"'
Publikováno v:
International Journal of Electronics. 88:287-300
An improved physical model for the collector current in the SOI submicrometre gate-controlled hybrid transistor (GCHT) is presented in this paper, with the bias-dependent dynamic threshold voltage of the GCHT redefined and evaluated, considering the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d506d3112fe73a3fdc7ca9c857e95d2c
https://doi.org/10.1080/00207210010006056
https://doi.org/10.1080/00207210010006056
Publikováno v:
City University of Hong Kong
Plasma immersion ion implantation is a burgeoning surface modification technique and not limited by the line-of-sight restriction plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3340c009ae56ba32b7cb690754a120a3
https://doi.org/10.1063/1.1149675
https://doi.org/10.1063/1.1149675
Publikováno v:
Review of Scientific Instruments. 69:1495-1498
The high voltage and electromagnetic field environment poses a big challenge to a control system for plasma immersion ion implantation(PIII). The automation process must be immune to electric field interference produced by the high voltage power supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84455590c36353ccdeee04778e95704b
https://doi.org/10.1063/1.1148785
https://doi.org/10.1063/1.1148785
Publikováno v:
Review of Scientific Instruments. 68:1866-1874
A new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed, and installed in the City University of Hong Kong. The system is designed for general R&D applications in metallurgy, tribology, surface modificatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e931530425d087b34909ee5692034c4
https://doi.org/10.1063/1.1147959
https://doi.org/10.1063/1.1147959
Autor:
C. Patrick Yue, Ping K. Ko
Publikováno v:
VLSI-DAT
The importance of China's role in the electronics industry, in terms of both market size and its criticality in global supply chain, cannot be overstated. Over the past decade, China has emerged from a mere service provider of semiconductor assembly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d033e818b438f31297c6e78b31aab127
https://doi.org/10.1109/vlsi-dat.2012.6212608
https://doi.org/10.1109/vlsi-dat.2012.6212608
Autor:
Ping K. Ko, Tzu-Yin Chiu
Publikováno v:
International Journal of High Speed Electronics and Systems. :153-167
The merits of high speed bipolar and low power VLSI CMOS are combined in BiCMOS technology. Designers are exploiting additional dimensions of flexibility and are implementing aggressive high performance systems not achievable before. Various approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23e574c26f85d148722c86f4d2a14e7c
https://doi.org/10.1142/s0129156490000083
https://doi.org/10.1142/s0129156490000083
Publikováno v:
International Journal of Electronics. 68:721-728
A simple model is presented for the negative drain current transients observed in GaAs MESFETs when subjected to ionizing radiation. The two dominant mechanisms are proposed to be electron trapping under the Schottky gate and in the neutral semi-insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a65ca538edee61fb7848eeb4e1fb42e
https://doi.org/10.1080/00207219008921214
https://doi.org/10.1080/00207219008921214
Publikováno v:
IEEE International SOI Conference SOI-02.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf521ccaa767df2c77afb2a779e0e169
https://doi.org/10.1109/soi.2002.1044478
https://doi.org/10.1109/soi.2002.1044478
This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a9a0a7660dfd6a8eeeeed639aa86b7a
https://hdl.handle.net/11380/9945
https://hdl.handle.net/11380/9945
Publikováno v:
30th International Reliability Physics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02337b971d0c9e26d103f6240b904fec
https://doi.org/10.1109/irps.1992.363266
https://doi.org/10.1109/irps.1992.363266