Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Ping Chuan Chang"'
Publikováno v:
IEEE Electron Device Letters. 43:252-255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd0c7716590bd69d6382daf70811ce71
https://doi.org/10.1109/led.2021.3134805
https://doi.org/10.1109/led.2021.3134805
Publikováno v:
Journal of Nanomaterials. 2014:1-4
We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e5d08b1156ad1b1196b7f514483fb1
https://doi.org/10.1155/2014/623043
https://doi.org/10.1155/2014/623043
Autor:
Chia Hao Chen, Kai Hsuan Lee, Sheng Po Chang, Hung-Wei Shiu, Shoou-Jinn Chang, Tse Pu Chen, Kuang Wei Liu, Ping Chuan Chang, Lo-Yueh Chang
Publikováno v:
Science of Advanced Materials. 5:873-880
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca31c757655563c8235ddb255ba20d8
https://doi.org/10.1166/sam.2013.1533
https://doi.org/10.1166/sam.2013.1533
Publikováno v:
Microelectronic Engineering. 104:105-109
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c508b11ea8c6c24d9560bae2ea4dd53
https://doi.org/10.1016/j.mee.2012.11.020
https://doi.org/10.1016/j.mee.2012.11.020
Publikováno v:
Materials Chemistry and Physics. 134:899-904
InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5c18847ba875c5002ef5d42bca128c
https://doi.org/10.1016/j.matchemphys.2012.03.087
https://doi.org/10.1016/j.matchemphys.2012.03.087
Publikováno v:
Solid-State Electronics. 72:38-43
We report the fabrication of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-MgxNy/GaN as an epitaxial buffer and using SiO2 dielectric by photochemical vapor deposition (Photo-CVD) simultaneous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d74d58c013d8b448a2f3151cefb984
https://doi.org/10.1016/j.sse.2012.02.009
https://doi.org/10.1016/j.sse.2012.02.009
Publikováno v:
physica status solidi (a). 209:579-584
A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31889ce1ebaf39b90a2dd98e40ff4db
https://doi.org/10.1002/pssa.201127545
https://doi.org/10.1002/pssa.201127545
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1107-1112
We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78b366167e404aba740c3f89975fb360
https://doi.org/10.1109/jqe.2011.2158389
https://doi.org/10.1109/jqe.2011.2158389
Autor:
Ping-Chuan Chang, Cheng-Huang Kuo, Sheng-Joue Young, San-Lein Wu, Tse-Pu Chen, Bohr-Ran Huang, Shoou-Jinn Chang, S. M. Wang
Publikováno v:
IEEE Sensors Journal. 10:1609-1614
We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8567e80c3be33cdbdc70fdbc04d4533f
https://doi.org/10.1109/jsen.2010.2045889
https://doi.org/10.1109/jsen.2010.2045889
Publikováno v:
Journal of Alloys and Compounds. 504:S356-S360
The carbon nanotube (CNT)/aluminosilicate composites were fabricated by the TEOS/boehmite catalyst sol–gel and chemical vapor deposition (CVD) method in this study. Two different CVD growing processes were carefully controlled. One is the continuou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::015b6a8f0dd9365fbbdf4c03ecf00a08
https://doi.org/10.1016/j.jallcom.2010.02.048
https://doi.org/10.1016/j.jallcom.2010.02.048