Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Pin‐Guang Chen"'
Autor:
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Externí odkaz:
https://doaj.org/article/542e8768d7ce43eeb099863d27bfde87
Publikováno v:
Sensors, Vol 18, Iss 9, p 2795 (2018)
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (
Externí odkaz:
https://doaj.org/article/c046bc9520bc48268bed684bdcada48b
Autor:
Pin-Guang Chen, 陳品光
106
The internet of things (IoT) and wearable applications become more popular in recent years, therefore, it has become necessary to develop small sized, high performance devices, with low power consumption. In GaN based MOS-HEMTs, the subthres
The internet of things (IoT) and wearable applications become more popular in recent years, therefore, it has become necessary to develop small sized, high performance devices, with low power consumption. In GaN based MOS-HEMTs, the subthres
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/h3s5kv
Publikováno v:
Surface and Interface Analysis. 54:864-872
Autor:
C.-Y. Liao, Yu-Ying Lai, Wei-Shuo Li, Chia-Feng Wu, Min-Hung Lee, Pin-Guang Chen, Kuo-Yu Hsiang, Kuan-Neng Chen, Hao-Tung Chung, Huang-Chung Cheng, Jun-Dao Luo
Publikováno v:
IEEE Electron Device Letters. 42:1152-1155
A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polariz
Autor:
Kai-Chi Chuang, Yun-Tien Yeh, Wei-Shuo Li, Chia-Feng Wu, Pin-Guang Chen, Kuo-Yu Hsiang, Yi-Shao Li, Min-Hung Lee, Yu-Ying Lai, Hao-Tung Chung, Kuan-Neng Chen, Huang-Chung Cheng, Jun-Dao Luo, C.-Y. Liao
Publikováno v:
IEEE Transactions on Electron Devices. 68:1374-1377
A plasma-based ferroelectric undoped HfO x capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the mater
Autor:
Pin-Guang Chen, 陳品光
103
Recently, with the increasing adoption of FIT tour and backpacking, Low Cost Carriers (LCCs) has made a made a disruptive innovation to the aviation industry, and created diversified options for flyers. During the purchase process, the price
Recently, with the increasing adoption of FIT tour and backpacking, Low Cost Carriers (LCCs) has made a made a disruptive innovation to the aviation industry, and created diversified options for flyers. During the purchase process, the price
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/vap3vy
Autor:
Pin-Guang Chen1,2, Kuan-Ting Chen1, Ming Tang3, Zheng-Ying Wang1, Yu-Chen Chou1, Min-Hung Lee1 mhlee@ntnu.edu.tw
Publikováno v:
Sensors (14248220). Sep2018, Vol. 18 Issue 9, p2795. 7p.
Autor:
H.-Y. Chen, C.-Y. Liao, Ming-Han Liao, Shu-Tong Chang, Zheng-Ying Wang, Yu-Chen Chou, Ruo-Chun Hong, Min-Hung Lee, C. Lo, Pin-Guang Chen, Siang-Sheng Gu, Shih-Yao Chen, Kai-Shin Li, Kuan-Ting Chen, Gao-Yu Siang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Publikováno v:
Solid-State Electronics. 129:206-209
Indium-based ternary-barrier high-electron-mobility transistors (HEMT) directly on Si substrate are demonstrated in this work, using a structure of In 0.18 Al 0.82 N/AlN/GaN-on-Si for high-power applications. The advantages of HEMTs on Si substrates