Single-Electron Transistor in Strained Si/SiGe Heterostructures

Autor: Berer, Thomas, Pachinger, Dietmar, Pillwein, Georg, Muehlberger, Michael, Lichtenberger, Herbert, Brunthaler, Gerhard, Schaeffler, F.

A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to t

Externí odkaz: http://arxiv.org/abs/cond-mat/0508260

Dipole trap model for the metal–insulator transition in gated silicon-inversion layers

Autor: Hörmann, Thomas, Pillwein, Georg, Brunthaler, Gerhard

Publikováno v: In Physica E: Low-dimensional Systems and Nanostructures 2006 34(1):236-239

Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers

Autor: Pillwein, Georg, Lindner, Benjamin, Brunthaler, Gerhard, Ahopelto, Jouni, Prunnila, Mika

Publikováno v: Pillwein, G, Lindner, B, Brunthaler, G, Ahopelto, J & Prunnila, M 2007, Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers . in Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors-ICPS 2006 ., 599, American Institute of Physics (AIP), AIP Conference Proceedings, no. 1, vol. 893, 28th International Conference on the Physics of Semiconductors-ICPS 2006, Vienna, Austria, 24/07/06 . https://doi.org/10.1063/1.2730034

We have electrically investigated the two dimensional electron gas (2DEG) of Si inversion layers in MOS structures based on silicon on insulator (SOI) substrates. When investigating the metal‐to‐insulator transition in two dimensions (2D‐MIT),

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=355e65625b88::4911df58e8375a85b37a0799adf1ed4f
https://cris.vtt.fi/en/publications/b41c4142-9090-4ece-be7a-fe316f1092e6

Formation of quantum dots in the contact region of high-mobility Si inversion layers in the metal-insulator transition regime.

Autor: Pillwein, Georg, Lindner, Benjamin, Brunthaler, Gerhard, Ahopelto, Jouni, Prunnila, Mika

Publikováno v: AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p599-600, 2p, 1 Diagram, 2 Graphs