Zobrazeno 1 - 10
of 599
pro vyhledávání: '"Pillonnet, A"'
Autor:
Schmidt, Quentin, Jadot, Baptiste, Martinez, Brian, Houriez, Thomas, Morel, Adrien, Meunier, Tristan, Pillonnet, Gaël, Billiot, Gérard, Jansen, Aloysius, Jehl, Xavier, Thonnart, Yvain, Badets, Franck
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K befor
Externí odkaz:
http://arxiv.org/abs/2410.22565
Hybrid switched-capacitor converters (HSCC) offer great potential for high efficiency and power density compared to purely capacitor- or inductor-based converters. However, the recent proliferation of HSCC topologies has made it difficult to choose t
Externí odkaz:
http://arxiv.org/abs/2305.06494
Publikováno v:
Journal of Road Safety, Vol 35, Iss 4 (2024)
The aim of this study is to document the crash incidence rate for cyclists when cycling on five different types of cycling infrastructure in two cities in France. A questionnaire was carried out in 2021 with commuter cyclists in Lyon-Villeurbanne (n=
Externí odkaz:
https://doaj.org/article/4d277c5cd1f443cfaa315ceb10ab4cd1
Publikováno v:
In Sensors and Actuators: A. Physical 1 October 2024 376
Autor:
Gael Pillonnet, Patrick P. Mercier
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 664-682 (2024)
Hybrid switched-capacitor converters (HSCCs) have gained attention due to their promising efficiency and power density compared to traditional inductor- or capacitor-based converters. However, with the recent development of various HSCC topologies, i
Externí odkaz:
https://doaj.org/article/bbee2dd558d74ce7bd9fdcb03b72cf75
Autor:
Guevel, L. Le, Billiot, G., De Franceschi, S., Morel, A., Jehl, X., Jansen, A. G. M., Pillonnet, G.
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMO
Externí odkaz:
http://arxiv.org/abs/2102.04364
Autor:
Le Guevel, L., Billiot, G., De Franceschi, S., Morel, A., Jehl, X., Jansen, A.G.M., Pillonnet, G.
Publikováno v:
In Chip December 2023 2(4)
Publikováno v:
Chip, Vol 2, Iss 4, Pp 100068- (2023)
In the pursuit for scalable quantum processors, significant effort has been devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. The current work presented a novel approach called imped
Externí odkaz:
https://doaj.org/article/914be94ca7d0431ea57adfd32ee1db9a
Autor:
Bohuslavskyi, H., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($\tau_
Externí odkaz:
http://arxiv.org/abs/1903.06021
Autor:
Bohuslavskyi, H., Jansen, A. G. M., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Jehl, X., Hutin, L., Bertrand, B., Billiot, G., Pillonnet, G., Arnaud, F., Galy, P., De Franceschi, S., Vinet, M., Sanquer, M.
Publikováno v:
IEEE Electron Device Letters, 5 March 2019
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) =
Externí odkaz:
http://arxiv.org/abs/1903.05409