Zobrazeno 1 - 10
of 141
pro vyhledávání: '"Pillarisetty, R."'
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor manufacturing on
Externí odkaz:
http://arxiv.org/abs/2112.05032
Autor:
Zwerver, A. M. J., Krähenmann, T., Watson, T. F., Lampert, L., George, H. C., Pillarisetty, R., Bojarski, S. A., Amin, P., Amitonov, S. V., Boter, J. M., Caudillo, R., Corras-Serrano, D., Dehollain, J. P., Droulers, G., Henry, E. M., Kotlyar, R., Lodari, M., Luthi, F., Michalak, D. J., Mueller, B. K., Neyens, S., Roberts, J., Samkharadze, N., Zheng, G., Zietz, O. K., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S.
Publikováno v:
Nature Electronics 5, 184-190 (2022)
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However,
Externí odkaz:
http://arxiv.org/abs/2101.12650
Autor:
Sabbagh, D., Thomas, N., Torres, J., Pillarisetty, R., Amin, P., George, H. C., Singh, K., Budrevich, A., Robinson, M., Merrill, D., Ross, L., Roberts, J., Lampert, L., Massa, L., Amitonov, S., Boter, J., Droulers, G., Eenink, H. G. J., van Hezel, M., Donelson, D., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S., Scappucci, G.
Publikováno v:
Phys. Rev. Applied 12, 014013 (2019)
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99
Externí odkaz:
http://arxiv.org/abs/1810.06521
Publikováno v:
Phys. Rev. B 79, 041303 (2009)
We study the frictional drag in high mobility, strongly interacting GaAs bilayer hole systems in the vicinity of the filling factor $\nu=1$ quantum Hall state (QHS), at the same fillings where the bilayer resistivity displays a reentrant insulating p
Externí odkaz:
http://arxiv.org/abs/0808.3807
We find that the temperature dependence of the drag resistivity ($\rho_{D}$) between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Near the apparent metal-insulator transition, the temperature dependen
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407049
We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with the metal
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402382
Publikováno v:
Phys. Rev. B 68, 201308 (2003)
Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306146
We performed in-plane magnetodrag measurements on dilute double layer two-dimensional hole systems, at in-plane magnetic fields that suppress the apparent metallic behavior, and to fields well above those required to fully spin polarize the system. W
Externí odkaz:
http://arxiv.org/abs/cond-mat/0301250
Publikováno v:
Phys. Rev. Lett. 91, 076802 (2003)
We study interacting GaAs hole bilayers in the limit of zero tunneling. When the layers have equal densities, we observe a phase coherent bilayer quantum Hall (QH) state at total filling factor $\nu=1$, flanked by insulating phases at nearby fillings
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209649
Publikováno v:
Phys. Rev. Lett. 89, 016805 (2002)
We report drag measurements on dilute double layer two-dimensional hole systems in the regime of r_s=19~39. We observed a strong enhancement of the drag over the simple Boltzmann calculations of Coulomb interaction, and deviations from the T^2 depend
Externí odkaz:
http://arxiv.org/abs/cond-mat/0202077