Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pil-Sung Jang"'
Autor:
Thomas Byunghak Cho, Junghwan Han, Heeseon Shin, Jongwoo Lee, Pil-Sung Jang, Young-Min Kim, Jae-Seung Lee, Jin Tae-Hwan
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 69:452-468
This article presents power-efficient radio frequency (RF) receiver designs, particularly for advanced long-term evolution cellular applications. The two proposed single-ended receiver architectures can fully support multiple-channel RF signals in ad
Autor:
Jongwoo Lee, Young-Min Kim, Won Ko, Seungchan Heo, Pil-Sung Jang, Joongseok Lim, Thomas Byunghak Cho
Publikováno v:
ISCAS
A Ka-band phase shifting low noise amplifier (LNA) using stacked-FET structure in 14nm FinFET CMOS is presented for 5G beam forming array. The gate capacitance of the middle CG-FET is adjusted for phase variation. The additionally stacked CG-FET prov
Autor:
Junghwan Han, Suseob Ahn, Pil-Sung Jang, Seungchan Heo, Heeseon Shin, Young-Min Kim, Jin Tae-Hwan, Jungyeol Bae, Jae-Seung Lee, Thomas Byunghak Cho
Publikováno v:
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A wideband cellular RF receiver for multi-band carrier aggregation employing a current-efficient wideband low noise amplifier and a frequency-band switchable transformer is demonstrated in a 14nm FinFET CMOS technology. The proposed wideband low-nois
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 15:6890-6897
EAF reduction slag has unstable properties of expansion and destruction. Therefore, it cannot be used as a construction material. The purpose of this study was to use EAF reduction slag as a concrete admixture. EAF reduction slag contains 11CaO·7Al2
Autor:
Young-Min Kim, Jae-won Choi, Pil-Sung Jang, Heeseon Shin, Seungchan Heo, Dae-Hyun Kwon, Sanghoon Kang, Junghwan Han, Suseob Ahn, Thomas Byunghak Cho
Publikováno v:
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
An RF receiver for carrier aggregation employing a low noise amplifier with a current reusing technique and a frequency-band switchable transformer is demonstrated in a 28nm LP CMOS technology. The proposed single-ended low-noise amplifier can suppor