Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Pil-Kyu Kang"'
Autor:
Pil Kyu Kang
Publikováno v:
Korean Association For Learner-Centered Curriculum And Instruction. 20:207-236
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1254cbf20c73b505eb42f6e18d77d25d
https://doi.org/10.22251/jlcci.2020.20.9.207
https://doi.org/10.22251/jlcci.2020.20.9.207
Autor:
Yongin Park, Jung Hee-Jae, Paul K. J. Park, Sehoon Yoo, Bong Jongwoo, Young-Ho Lee, Joonseok Kim, Hoon-joo Na, Doo-Won Kwon, Hyunsurk Ryu, Seok-Ho Kim, Ki-Hyun Hwang, Jong-Seok Seo, Jeong-Seok Kim, Ito Masamichi, Yunjae Suh, Seung-Hun Shin, Pil-Kyu Kang, Chang-Woo Shin, Seol Namgung, Yeo Dong-Hee, Choi Seungnam, Junseok Kim
Publikováno v:
ISCAS
This paper reports a 1280×960 DVS. A 4.95-μm pixel pitch is achieved with in-pixel Cu-Cu connection and the newly designed GIDL-suppression scheme. A sequential column selection scheme and a global event-holding function are implemented to minimize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a04aa4ee33ed157fb09ee6d9dec073aa
https://doi.org/10.1109/iscas45731.2020.9180436
https://doi.org/10.1109/iscas45731.2020.9180436
Autor:
Hoon-joo Na, Seok-Ho Kim, Kwang-jin Moon, Kim Taeyeong, Ki-Hyun Hwang, Pil-Kyu Kang, Kyu-Ha Lee, Joo-Hee Jang, Sang-Jin Hyun
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
The scaling of semiconductor device below 10nm has faced the higher process difficulty and longer development periods. Three-dimensional integrated circuits (3D IC) using chip partitioning and wafer-to-wafer bonding have been acknowledged as the next
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a1095b4b27bd9016e98ac66d6863115
https://doi.org/10.1109/ectc.2019.00101
https://doi.org/10.1109/ectc.2019.00101
Publikováno v:
ECS Transactions. 64:77-82
Backside illuminated CMOS image sensors with a 3D stacked architecture, where the pixel array is attached on top of the logic circuit, was introduced and have just come to the market. Image sensor featuring 3D stacking was realized by connection betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b3f78b6fb0c9c4389b715edf674ec9b
https://doi.org/10.1149/06405.0077ecst
https://doi.org/10.1149/06405.0077ecst
Autor:
Jin Bum Kim, In Soo Jung, Byeong Chan Lee, Jong-wook Lee, Yong-Hoon Son, Byung-Il Ryu, Min-Gu Kang, Young-pil Kim, Si-Young Choi, U-In Chung, Pil-Kyu Kang, Seung-Hoon Lee, Joo Tea Moon
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
LEG (laser-induced epitaxial growth) process has been proposed to obtain the single c-Si layer over oxide and successfully demonstrated with cell-stacked high density SRAM. With LEG process, the energy density of laser beam and the seed formation are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586effd0c5d9b840f11cbfb032469bb4
https://doi.org/10.1109/vlsit.2007.4339735
https://doi.org/10.1109/vlsit.2007.4339735
Autor:
Deok-Hyung Lee, Min-Gu Kang, Young-Eun Lee, U-In Chung, Sun-Ghil Lee, Sung-Kwan Kang, Joo Tae Moon, Young-pil Kim, In-Soo Jung, Yong-Hoon Son, Jong-wook Lee, Yu Gyun Shin, Pil-Kyu Kang
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
We demonstrate a highly manufacturable substrate-induced strained Si device, which is compatible with the conventional Si bulk process. It utilizes ultra-thick-strained Si (UTSS) layer thicker than 3000 /spl Aring/ and relaxed SiGe layer with low Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8685f962037423d31f018bfa0ede6788
https://doi.org/10.1109/essder.2005.1546647
https://doi.org/10.1109/essder.2005.1546647
Publikováno v:
Korean Journal of Materials Research. 13:801~805-801~805
To explore the annealing temperature dependence of dielectric properties thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The thin films fabricated MOCVD and MOD were annealed in at temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce09501fcfd9f52cdf18e98d59d9c815
https://doi.org/10.3740/mrsk.2003.13.12.801
https://doi.org/10.3740/mrsk.2003.13.12.801
Publikováno v:
Korean Journal of Materials Research. 13:436~441-436~441
The characteristics of orientation were studied for the thin films, which were prepared on the glass by CVD (chemical vapor deposition) at various substrate temperatures. It was confirmed that films exhibited -preferred orientation in a specific temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0ce23868bc941bb6ee001700cc18cbd
https://doi.org/10.3740/mrsk.2003.13.7.436
https://doi.org/10.3740/mrsk.2003.13.7.436
Autor:
Hwa Sung Kim, Byung Kook Lee, Jong Kyu Lee, Kyu Yoon Hwang, Pil Kyu Kang, Ik Soo Ahn, Kyu Dong Ahn, Yong-Bae Kim, Gap Soo Lee, Ku Seok Han
Publikováno v:
Korean Journal of Occupational and Environmental Medicine. 10:438
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a62c106ac487cae53ba78812eeca11b3
https://doi.org/10.35371/kjoem.1998.10.4.438
https://doi.org/10.35371/kjoem.1998.10.4.438