Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Pik Kee Tan"'
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115327-115327-11 (2018)
By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose elect
Externí odkaz:
https://doaj.org/article/6f56e835d12142789c42c12c8151ced4
Autor:
Yanlin Pan, Krishnanunni Menon, Pik Kee Tan, Kyaw Htin, Hao Tan, Hnin Hnin Win Thoungh Ma, C. Q. Chen, Naiyun Xu, Siong Luong Ting
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 6:52-61
Autor:
Teck Leong Wee, Handoko Linewih, Sally Chwa, Pik Kee Tan, Alfred Quah, Peng Tiong Ng, Hnin Hnin Won, Thoungh Ma, Fransiscus Rivai
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Autor:
Siong Luong Ting, Pik Kee Tan, Moon SeungJe, Jerome Cuevas Alag, Yanlin Pan, Hnin Hnin, Tin Tin Yu, Kevin Kang, Alfred Quah, Changqing Chen
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 5:1273-1281
Autor:
Naiyun Xu, D. Nagalingam, R. Fransiscus, Siong Luong Ting, Pik Kee Tan, A. C. T. Quah, Htin Kyaw, H. H. W. Thoungh, C. Q. Chen, Yanlin Pan, Krishnanunni Menon, P.T. Ng, S. M. Parab, Hao Tan
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Autor:
Naiyun Xu, Hnin Hnin Win Thoung, Krishnanunni Menon, Htin Kyaw, Pik Kee Tan, Changqing Chang, Hao Tan
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Autor:
Yanlin Pan, Siong Luong Ting, Hao Tan, Hnin Hnin Win Thoungh, C. Q. Chen, Pik Kee Tan, Krishnanunni Menon, Naiyun Xu, Htin Kyaw
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Autor:
Siong Luong Ting, Pik Kee Tan, Hnin Hnin Win Thoungh, Krishnanunni Menon, Naiyun Xu, Yanlin Pan, Changqing Chen
Publikováno v:
Microelectronics Reliability. 135:114566
Autor:
S.Y. Thum, H.H.W. Thoungh, Pik Kee Tan, C. Q. Chen, F. Rivai, D. Nagalingam, T.T. Yu, P.T. Ng, S.J. Moon, Siong Luong Ting, S.P. Neo, Yanlin Pan
Publikováno v:
International Symposium for Testing and Failure Analysis.
Gate oxide breakdown has always been a critical reliability issue in Complementary Metal-Oxide-Silicon (CMOS) devices. Pinhole analysis is one of the commonly use failure analysis (FA) technique to analysis Gate oxide breakdown issue. However, in ord