Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pietro Paolo Barbarino"'
Publikováno v:
Materials & Design, Vol 239, Iss , Pp 112751- (2024)
We investigate defects in 4H-SiC p-n junction diodes introduced trough nanoindentation procedure. A nanoindentation load range between 3 mN and 15 mN was explored. Scanning Electron Microscopy and Transmission Electron Microscopy analysis are adopted
Externí odkaz:
https://doaj.org/article/b922fa1482664f56a468968030100184
Autor:
Pietro Paolo Barbarino, Antonella Sciuto, Massimo Zimbone, D. Mello, G. D'Arrigo, Massimo Mazzillo, Lucia Calcagno
We propose a Near Infra Red photon emitting 4H-SiC compact vertical pn diode. The “as fabricated” diode exhibits a strong visible emission at 500 nm associated with the intrinsic and/or processing induced D1 centers in the semiconductor. Thanks t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1d78961efac30c34a48d523c8a6bf42
http://hdl.handle.net/20.500.11769/499539
http://hdl.handle.net/20.500.11769/499539
Autor:
Sebastiano Albergo, Andrea Santangelo, S. Di Franco, A. Sciuto, Giuseppe Longo, Massimo Mazzillo, D. Mello, Piergiulio Lenzi, G. D'Arrigo, O. Adriani, Salvatore Cascino, Alessia Tricomi, Pietro Paolo Barbarino, O. Starodubtsev
Publikováno v:
IEEE sensors journal 17 (2017): 4460–4465. doi:10.1109/JSEN.2017.2711643
info:cnr-pdr/source/autori:Sciuto A.; Mazzillo M.; Lenzi P.; Di Franco S.; Mello D.; Barbarino P. P.; Longo G.; Cascino,S.; Santangelo A.; Albergo S.; Tricomi A.; Starodubtsev O.; Adriani O.; D'Arrigo G./titolo:Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage/doi:10.1109%2FJSEN.2017.2711643/rivista:IEEE sensors journal/anno:2017/pagina_da:4460/pagina_a:4465/intervallo_pagine:4460–4465/volume:17
info:cnr-pdr/source/autori:Sciuto A.; Mazzillo M.; Lenzi P.; Di Franco S.; Mello D.; Barbarino P. P.; Longo G.; Cascino,S.; Santangelo A.; Albergo S.; Tricomi A.; Starodubtsev O.; Adriani O.; D'Arrigo G./titolo:Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage/doi:10.1109%2FJSEN.2017.2711643/rivista:IEEE sensors journal/anno:2017/pagina_da:4460/pagina_a:4465/intervallo_pagine:4460–4465/volume:17
We report on the structure and performance of 4H-SiC p(+)-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm(2) at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105 was meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d842b10b37faff1d848657f255179e8
http://hdl.handle.net/20.500.11769/322790
http://hdl.handle.net/20.500.11769/322790
Autor:
Sebania Libertino, Pietro Paolo Barbarino, D. Mello, Yuri Musienko, Mario Francesco Romeo, Massimo Mazzillo, Salvatore Lombardo, Antonella Sciuto, Giorgio Fallica
Publikováno v:
IEEE Transactions on Radiation and Plasma Medical Sciences
IEEE transactions on radiation and plasma medical sciences 1 (2017): 212–220. doi:10.1109/TRPMS.2017.2679003
info:cnr-pdr/source/autori:Mazzillo, Massimo; Mello, Domenico; Barbarino, Pietro Paolo; Romeo, Mario; Musienko, Yuri; Sciuto, Antonella; Libertino, Sebania; Lombardo, Salvatore; Fallica, Giorgio/titolo:Noise Reduction in Silicon Photomultipliers for Use in Functional Near-Infrared Spectroscopy/doi:10.1109%2FTRPMS.2017.2679003/rivista:IEEE transactions on radiation and plasma medical sciences/anno:2017/pagina_da:212/pagina_a:220/intervallo_pagine:212–220/volume:1
IEEE transactions on radiation and plasma medical sciences 1 (2017): 212–220. doi:10.1109/TRPMS.2017.2679003
info:cnr-pdr/source/autori:Mazzillo, Massimo; Mello, Domenico; Barbarino, Pietro Paolo; Romeo, Mario; Musienko, Yuri; Sciuto, Antonella; Libertino, Sebania; Lombardo, Salvatore; Fallica, Giorgio/titolo:Noise Reduction in Silicon Photomultipliers for Use in Functional Near-Infrared Spectroscopy/doi:10.1109%2FTRPMS.2017.2679003/rivista:IEEE transactions on radiation and plasma medical sciences/anno:2017/pagina_da:212/pagina_a:220/intervallo_pagine:212–220/volume:1
Silicon photomultipliers (SiPMs) have been recently proposed for different applications in medical imaging area, inclunding functional near-infrared spectroscopy (fNIRS), due to their single photon sensitivity, fast timing response, low operation bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80ae78dea41400819efa0f44dbab8d2c
Autor:
Yuri Musienko, Pietro Paolo Barbarino, Giorgio Fallica, Sebania Libertino, Massimo Mazzillo, Antonella Sciuto, D. Mello, Mario Francesco Romeo, Salvatore Lombardo
Publikováno v:
IEEE Sensors Journal
IEEE sensors journal 17 (2017): 4075–4082. doi:10.1109/JSEN.2017.2699202
info:cnr-pdr/source/autori:Mazzillo, Massimo; Mello, Domenico; Barbarino, Pietro Paolo; Romeo, Mario F.; Musienko, Yuri; Sciuto, Antonella; Libertino, Sebania; Lombardo, Salvatore A.; Fallica, Giorgio/titolo:Electro-Optical Characterization of SiPMs With Green Bandpass Dichroic Filters/doi:10.1109%2FJSEN.2017.2699202/rivista:IEEE sensors journal/anno:2017/pagina_da:4075/pagina_a:4082/intervallo_pagine:4075–4082/volume:17
IEEE sensors journal 17 (2017): 4075–4082. doi:10.1109/JSEN.2017.2699202
info:cnr-pdr/source/autori:Mazzillo, Massimo; Mello, Domenico; Barbarino, Pietro Paolo; Romeo, Mario F.; Musienko, Yuri; Sciuto, Antonella; Libertino, Sebania; Lombardo, Salvatore A.; Fallica, Giorgio/titolo:Electro-Optical Characterization of SiPMs With Green Bandpass Dichroic Filters/doi:10.1109%2FJSEN.2017.2699202/rivista:IEEE sensors journal/anno:2017/pagina_da:4075/pagina_a:4082/intervallo_pagine:4075–4082/volume:17
There is an increasing interest to use silicon photomultipliers (SiPMs) in medical applications like Photo-plethysmography or Functional Near Infrared Spectroscopy, allowing the monitoring of physiological signs through non-invasive equipment. The us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd57b442c43d768449b48f22f22bfb14