Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pietro Andricciola"'
Autor:
Claudio Fiegna, Nicole Wils, Hans Tuinhout, Felice Crupi, Gino Giusi, Paolo Magnone, Pietro Andricciola, R. Jain
Publikováno v:
IEEE Transactions on Electron Devices. 58:2347-2353
This paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a larg
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:1687-1696
Systematic and random parametric mismatches are major performance limiters as well as notorious causes for redesigns of high precision mixed-signal circuits and systems. Therefore, it is extremely important to measure, analyze, interpret, model and d
Autor:
Pietro Andricciola
It is impossible to fabricate two exactly identical transistors. Microscopic device architecture differences lead to slightly different electrical performance, indicated with the term mismatch. Due to the shrinking of the device (more pronounced mism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eab7a8945af0acdba92fb23b6e6a5440
https://research.utwente.nl/en/publications/38f0d242-dbf5-42ae-95d0-e31f2cebc397
https://research.utwente.nl/en/publications/38f0d242-dbf5-42ae-95d0-e31f2cebc397
Publikováno v:
2010 International Conference on Microelectronic Test Structures (ICMTS).
This paper summarizes an experimental study on matching of long NMOS transistors and the effects of splitting-up long transistors into series of short transistors. For this purpose, a dedicated set of matched pair test structures were designed and ma
Autor:
Nicole Wils, Hans Tuinhout, Andries J. Scholten, B. De Vries, Pietro Andricciola, D. B. M. Klaassen
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Based on modified 2-D drift-diffusion device simulations, mismatch signatures and principal component analysis, this study proves that random interface states fluctuating in terms of density, position and energy levels, in addition to random dopant f