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pro vyhledávání: '"Pieter Vanysacker"'
Publikováno v:
Microelectronics Reliability. 47:1060-1068
This paper introduces an SCR based ESD protection design for SOI technologies. It is explained how efficient SCR devices can be constructed in SOI. These devices outperform MOS devices by about 4 times. Experimental data from 65 nm and 130 nm SOI is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f2c501e3fd9053d0aa8c0a7d072053
https://doi.org/10.1016/j.microrel.2006.11.011
https://doi.org/10.1016/j.microrel.2006.11.011
