Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Pieter Boelen"'
Autor:
Jose Ignacio del Agua Borniquel, Pieter Boelen, Christa Vrancken, T. Chiarella, Farid Sebaai, Philippe Absil, Evans Baiya, Rita Vos
Publikováno v:
Solid State Phenomena. :207-210
With the continuous down scaling features sizes, the need of speed increase and power consumption reduction start to be more and more critical. The classical integration scheme of poly silicon gate on CMOS devices does not meet the requirements of th
Autor:
Gerald Beyer, Jose Luis Hernandez, Aleksandar Radisic, Philippe M. Vereecken, Pieter Boelen, Aron Rosenfeld
Publikováno v:
ECS Transactions. 11:25-33
We have studied electrochemical nucleation and growth of copper on ruthenium and ruthenium-based substrates using galvanostatic methods. We show that potential-time transients recorded during galvanostatic deposition of Cu on Ru can be used to study
Publikováno v:
Solid State Phenomena. 92:49-52
Autor:
T. Lardin, Ismail Kashkoush, C. Cowache, Pieter Boelen, Adrien Danel, F. Tardif, R. Novak, A. Maciejny
Publikováno v:
Solid State Phenomena. :19-22
Autor:
C. Cowache, F. Tardif, Ismail Kashkoush, Pieter Boelen, R. Novak, M. Fayolle, I. Constant, T. Lardin
Publikováno v:
Solid State Phenomena. :169-172
Autor:
Phillip Peters, Michael Belisle, Alexander Sou-Kang Ko, Han-Wen Chen, Pieter Boelen, Kent Child, James S. Papanu, Steven Verhaverbeke, Roman Gouk, Elias Martinez
Publikováno v:
22nd European Mask and Lithography Conference.
Photon induced haze resulting from sulfur residues that remain after cleaning and photoresist stripping is a key challenge for 193 nm photomasks. In previously reported work, sulfur-free processes for cleaning and photoresist removal on mask blanks w
Autor:
Steven Verhaverbeke, Brian J. Brown, Kent Child, Roman Gouk, Suresh Shrauti, Cole Franklin, Pieter Boelen, James S. Papanu, Elias Martinez, Alexander Sou-Kang Ko, Han-Wen Chen
Publikováno v:
SPIE Proceedings.
Sub-pellicle defects and haze increase due to photon reaction with cleaning chemistry residues are especially problematic on photomasks for 193 nm and shorter exposure wavelengths. In addition to mask cleaning, these chemistries are also used for pho