Novel Selection Criteria of Primary Side Transistors for LLC Resonant Converters

Autor: Diego G. Lamar, Maria R. Rogina, Piet Vanmeerbeek, Jaume Roig, Filip Bauwens, Alberto Rodriguez

Publikováno v: RUO. Repositorio Institucional de la Universidad de Oviedo
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An insightful evaluation of commercial highvoltage power MOSFETs for soft-switching converters is reported in this paper with special emphasis on elucidating power loss contributions and electrical parameter requirements. Experimental tests have been

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc96888e8ed477f8b53d6c4b02c8a1cb
https://doi.org/10.1109/compel.2018.8460006

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Autor: Peter Moens, Michael J. Uren, Serge Karboyan, Markus Caesar, Martin Kuball, Piet Vanmeerbeek

Publikováno v: Uren, M J, Caesar, M, Karboyan, S, Moens, P, Vanmeerbeek, P & Kuball, M H H 2015, ' Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors ', IEEE Electron Device Letters, vol. 36, no. 8, pp. 826-828 . https://doi.org/10.1109/led.2015.2442293

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f07d5b07d8ec3bdb05441d2613a04fd4
https://doi.org/10.1109/led.2015.2442293

Influence of charge balance on the robustness of trench-based super junction diodes

Autor: Vincenzo d'Alessandro, David Flores, Andrea Irace, Ana Villamor-Baliarda, Peter Moens, Jaume Roig, Michele Riccio, Piet Vanmeerbeek

Publikováno v: Microelectronics Reliability. 52:2409-2413

One of the most important process parameters impacting the electrical performance in Super Junction (SJ) devices is the Charge Balance (CB). This paper demonstrates that the avalanche current capability in SJ diodes is not only dependent on the CB of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd42b236d986cc25b6cc2a98dfd9fdbb
https://doi.org/10.1016/j.microrel.2012.06.094

Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices

Autor: P. Gassot, S. Mouhoubi, B. Desoete, R. Charavel, Peter Moens, Jaume Roig, E. De Backer, Filip Bauwens, Piet Vanmeerbeek

Publikováno v: Microelectronics Reliability. 50:1758-1762

A new Deep Trench Isolation (DTI) structure with high-voltage capability (BV > 150 V) and latch-up suppression (log(I c /I e ) < -2 in adjacent pockets) is experimentally demonstrated in this work. The new DTI is implemented in a Nepi/BLN/N - /P + Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::491cbc6537572d13b0e16a88196c9f77
https://doi.org/10.1016/j.microrel.2010.07.117

Lifetime modeling of intrinsic gate oxide breakdown at high temperature

Autor: G. Lekens, R. Moonen, W. De Ceuninck, J. Boutsen, Piet Vanmeerbeek, Peter Moens

Publikováno v: Microelectronics Reliability. 47:1389-1393

High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3–13.2 MV/cm at high temperatures (160–240 °C). It is proven that even at these high temperatures lo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1095fc264b3b3afc1e2cb5a30cded687
https://doi.org/10.1016/j.microrel.2007.07.039