Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pierrette Rivallin"'
Autor:
Nicolas Sillon, Jean-Michel Hartmann, Patrick Reynaud, Aurélie Thuaire, F. Aussenac, Caroline Rauer, Emmanuel Rolland, Gaëlle Le Gac, Anne-Marie Charvet, Severine Cheramy, G. Audoit, Hubert Moriceau, Xavier Baillin, Pierrette Rivallin
Publikováno v:
Nanopackaging: From Nanomaterials to the Atomic Scale ISBN: 9783319211930
We present our recent developments on silicon technologies dedicated to the packaging of nano-objects/nano-devices. These technologies aim at both protecting and electrically connecting a nanoscale device positioned on a perfect Si(001)-(2 × 1):H su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a1635f96f467ec48b3a09745aa73ce
https://doi.org/10.1007/978-3-319-21194-7_8
https://doi.org/10.1007/978-3-319-21194-7_8
Autor:
C. Laviron, Alain Poncet, Davy Villanueva, Francois Wacquant, F. Salvetti, Julien Singer, Pierrette Rivallin, Martín Jaraíz, Olga Cueto
Publikováno v:
MRS Proceedings. 1070
This study presents the use of atomistic process simulations to optimize p+/n ultra-shallow junctions fabrication process. We first bring to the fore that a high injection of interstitials close to the boron profile decreases the sensibility of boron
Autor:
Francois Andrieu, Jean-Michel Hartmann, Pier-Francesco Fazzini, Cecilia Dupre, F. Laugier, Simon Deleonibus, Sorin Cristoloveanu, Gerard Ghibaudo, Olivier Faynot, Thomas Ernst, Fuccio Cristiano, Pierrette Rivallin, Alain Claverie
Publikováno v:
ECS Meeting Abstracts. :708-708
Based on electrical measurements and transmission electron microscopy imaging we propose in this paper a possible explanation for the measured mobility degradation with gate length reduction in short-channel MOSFETs. The carrier mobility in end-of-ra
Autor:
Martien I. den Hertog, Heinz Schmid, David Cooper, Jean-Luc Rouviere, Mikael T. Björk, Heike Riel, Pierrette Rivallin, Siegfried Karg, Walter Riess
Publikováno v:
Nano Letters; Nov2009, Vol. 9 Issue 11, p3837-3843, 7p
Conference
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