Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Pierre-Xiao Wang"'
Publikováno v:
Electronics, Vol 11, Iss 378, p 378 (2022)
Electronics; Volume 11; Issue 3; Pages: 378
Electronics; Volume 11; Issue 3; Pages: 378
System-level radiation testing of electronics is evaluated, based on test examples of the System-in-Package (SiP) module irradiations. Total ionizing dose and single event effects tests are analyzed to better understand the opportunities and limitati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f12d6d0cb59307a5d4858cec7ac6afe6
https://www.mdpi.com/2079-9292/11/3/378
https://www.mdpi.com/2079-9292/11/3/378
Autor:
Pierre-Xiao Wang, Alexandre Bosser, Pierre Kohler, Thibaut Lopez, Frederic Lochon, Gabriel Duran
Publikováno v:
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161d4b5726d2c36b5ce521e24e6153ec
https://doi.org/10.1109/radecs53308.2021.9954540
https://doi.org/10.1109/radecs53308.2021.9954540
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
We report a MBU-like transient test result on 4Mb SRAM die during HI SEE test. Further SEE laser test study showed that the root cause is the floating pads to conFigure & probe the die creating transient SEFI. A mitigation was also proposed and verif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840e3b663fbdb9eb7a7d028983ec116a
https://doi.org/10.1109/redw.2019.8906532
https://doi.org/10.1109/redw.2019.8906532
Autor:
Veronique Ferlet-Cavrois, Simone Gerardin, Federica Ferrarese, Alessandro Paccagnella, Marta Bagatin, Angelo Visconti, Michele Muschitiello, Alessandra Costantino, Pierre-Xiao Wang
Publikováno v:
IEEE Transactions on Nuclear Science. 61:2889-2895
The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories from two different lots is studied. More than 1 Terabit of floating gate cells were irradiated with gamma rays and the number of errors was statistical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86a17ea157d20c40ba550ab94377acff
https://doi.org/10.1109/tns.2014.2367813
https://doi.org/10.1109/tns.2014.2367813
Publikováno v:
2016 IEEE Radiation Effects Data Workshop (REDW).
We report on results of TID/SEL/SEU/SEFI tests of a state of the art RH DDR2-SDRAM Memory solution. The hard errors (TID/SEL) verified at die level, and soft errors (SEU/SEFI) verified at system level.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf52f0deacd367abf2c89fc172e2d43c
https://doi.org/10.1109/nsrec.2016.7891748
https://doi.org/10.1109/nsrec.2016.7891748
Autor:
Simone Gerardin, Alessandro Paccagnella, Pierre-Xiao Wang, C. Sellier, Christian Poivey, V. Ferlet-Cavrios, Marta Bagatin
The NAND Flash Radiation-Tolerant Intelligent Memory Stack (RTIMS FLASH) was developed to allow designers of space applications to take advantage of the large density offered by Commercial-Off-The-Shelf NAND Flash, without having to deal with radiati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8944f86c25cfd6162964960cf0860af2
http://hdl.handle.net/11577/3194114
http://hdl.handle.net/11577/3194114
Publikováno v:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We report on results of SEE (SEL, SET) tests of LVDS Quad Drivers and Receivers from different manufactures. In particular, this report provides a good way to characterize SET from user point of view, calculated the error rate as SEU, and analyzes th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e87ac844e5ae746387d60ae9d3afb0f
https://doi.org/10.1109/radecs.2013.6937394
https://doi.org/10.1109/radecs.2013.6937394
Autor:
Bagatin, Marta, Gerardin, Simone, Ferrarese, Federica, Paccagnella, Alessandro, Ferlet-Cavrois, Veronique, Costantino, Alessandra, Muschitiello, Michele, Visconti, Angelo, Wang, Pierre-Xiao
Publikováno v:
IEEE Transactions on Nuclear Science; Dec2014 Part 1, Vol. 61 Issue 6, p2889-2895, 7p
Publikováno v:
Electronics (2079-9292); Feb2022, Vol. 11 Issue 3, p378-N.PAG, 1p
Autor:
Rajkowski, Tomasz, Saigné, Frédéric, Niskanen, Kimmo, Boch, Jérôme, Maraine, Tadec, Kohler, Pierre, Dubus, Patrick, Touboul, Antoine, Wang, Pierre-Xiao
Publikováno v:
Electronics (2079-9292); Jun2021, Vol. 10 Issue 11, p1235, 1p