Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Pierre-Olivier Sassoulas"'
Autor:
Shintaro Yamada, Sungseo Cho, C. Grant Willson, Timo Rager, Bénédicte Mortini, Severine Gally, Mikio Yamachika, Patrick Jean Paniez, Pierre-Olivier Sassoulas, Jeffrey D. Byers, Kyle Patterson
Publikováno v:
Journal of Photopolymer Science and Technology. 12:553-560
This paper reports work toward designing environmentally stable alicyclic polymer-based photoresists for ArF excimer laser lithography. A design concept for improving post-exposure delay stability is suggested in this paper. The polymers described he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4516224c426f338b1ef287d8d833e2e
https://doi.org/10.2494/photopolymer.12.553
https://doi.org/10.2494/photopolymer.12.553
Autor:
Severine Gally, Pierre-Olivier Sassoulas, Bénédicte Mortini, Alain Prola, Patrick Jean Paniez
Publikováno v:
Journal of Photopolymer Science and Technology. 12:515-524
193nm lithography requires new resist formulations to achieve transparency requirements for single layer resist. In this paper, the properties of two 193nm chemically amplified resists, one based on the methacrylate chemistry and the other on the ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::996d8894748b8e6119ad5f235c667a6a
https://doi.org/10.2494/photopolymer.12.515
https://doi.org/10.2494/photopolymer.12.515
Alignment robustness for 90 nm and 65 nm node through copper alignment mark integration optimization
Autor:
Richard Johannes Franciscus Van Haren, Rob Morton, Henry Megens, Paul Christiaan Hinnen, Kevin E. Cooper, Clyde Browning, Jerome Depre, Ramon Navarro, Scott Warrick, Pierre-Olivier Sassoulas, Doug Reber
Publikováno v:
Optical Microlithography XVIII.
In this paper, methods for stacking ASML scribe lane alignment marks (SPM) and improving the mark performance at initial copper metal levels are discussed. The new mark designs and the theoretical reasons for mark design and/or integration change are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48aa27bfc71782b7a1c69a59d40dcd3a
https://doi.org/10.1117/12.599807
https://doi.org/10.1117/12.599807
Autor:
J. Todeschini, Pierre-Olivier Sassoulas, Laurent Pain, Murielle Charpin, Yves Laplanche, Ulf Weidenmueller, Peter Hahmann, S. Gough, Daniel Henry
Publikováno v:
SPIE Proceedings.
An easy way to pattern 65nm CD target, when optical lithography technology is not available, is to use an Electron Beam Direct Write tool (EBDW), which is well known for its high resolution patterning potentials, with the drawback of a very low throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50526a98de63ec97b5d6c62f3f35cd48
https://doi.org/10.1117/12.482342
https://doi.org/10.1117/12.482342
Autor:
Alain G. Deleporte, Pascal Fabre, Ganesh Sundaram, D. Ristoiu, Paul C. Knutrud, Philippe Spinelli, Rolf Arendt, Marc Poulingue, Vincent Vachellerie, Pierre-Olivier Sassoulas
Publikováno v:
SPIE Proceedings.
As geometrical dimensions of semiconductor devices decrease, the need to introduce Cu processes into the fabrication cycle becomes increasingly important as a means of maintaining line resistances and circuit time constants. However, the success of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca624d8d56f38d51039d216c9bf0bbc
https://doi.org/10.1117/12.473461
https://doi.org/10.1117/12.473461
Autor:
Pierre-Olivier Sassoulas, Alain Prola, Severine Gally, Patrick Jean Paniez, Bénédicte Mortini
Publikováno v:
Advances in Resist Technology and Processing XVII.
The constant reduction in critical dimensions required for new device generations and the use of sub-wavelength lithography impact the quality of the aerial image transferred into the resist layer. As an example, the intrinsic bias between isolated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d09bce67a814ad8bb58cff62c0b9ac64
https://doi.org/10.1117/12.388352
https://doi.org/10.1117/12.388352
Autor:
Joseph E. Oberlander, Axel Klauck-Jacobs, Munirathna Padmanaban, Severine Gally, Pierre-Olivier Sassoulas, Ralph R. Dammel, Charles Rosilio, Patrick Jean Paniez, Bénédicte Mortini
Publikováno v:
SPIE Proceedings.
A combination of methods has been applied to determine the glass transition and decomposition temperatures for several series of methacrylic copolymers used in commercial 193 nm resist as a function of the environment experienced by the protective gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a5a5de26cfedbcd2a4bcd62ab47396
https://doi.org/10.1117/12.350189
https://doi.org/10.1117/12.350189
Autor:
Bénédicte Mortini, Severine Gally, Franck Perrier, Charles Rosilio, Patrick Jean Paniez, Pierre-Olivier Sassoulas
Publikováno v:
SPIE Proceedings.
Norbornene-alt-Maleic Anhydride polymers have been recently introduced to fulfill the transparency and plasma durability requirements demanded for 193 nm lithography single layer resist system. Very few information exist in the literature on these ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eff09c43dd837f13d8243074d7f9328e
https://doi.org/10.1117/12.350186
https://doi.org/10.1117/12.350186
Autor:
Alain Prola, Bénédicte Mortini, Charles Rosilio, Severine Gally, Pierre-Olivier Sassoulas, Patrick Jean Paniez
Publikováno v:
SPIE Proceedings.
The implementation of new resist materials and advanced lithography processes requires new characterization techniques in order to understand the behavior of these systems and optimize their design. Examples are presented on two recent 193nm experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6cae77fde030d751dbee17544b03a81
https://doi.org/10.1117/12.346879
https://doi.org/10.1117/12.346879
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