Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Pierre-Marie Mans"'
Autor:
Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Caroline Arnaud, Cristell Maneux, Thomas Zimmer
Publikováno v:
Active and Passive Electronic Components, Vol 2010 (2010)
This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant con
Externí odkaz:
https://doaj.org/article/0542eb1b1e1d46b79e4039aae09c9f3a
Autor:
Sebastien Haendler, Sebastien Jouan, A. Monroy, Pierre-Marie Mans, Alexandre Talbot, A. Perrotin
Publikováno v:
ECS Transactions. 3:913-918
Since the introduction of Germanium in Silicon Bipolar transistors, and more recently the introduction of Carbon, the base band gap of SiGe:C heterojunction Bipolar transistors have been engineered to enhance device performance, thereby making them s
Autor:
Sebastien Fregonese, Denis Pache, Benoit Vandelle, Cristell Maneux, Thomas Zimmer, Sebastien Jouan, Pierre-Marie Mans, Caroline Arnaud
Publikováno v:
Active and Passive Electronic Components, Vol 2010 (2010)
Active and Passive Electronic Components
Active and Passive Electronic Components, Hindawi Publishing Corporation, 2010, pp.art. no. 542572. ⟨10.1155/2010/542572⟩
Active and Passive Electronic Components
Active and Passive Electronic Components, Hindawi Publishing Corporation, 2010, pp.art. no. 542572. ⟨10.1155/2010/542572⟩
This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate thefT-BVCEOtradeoff by various collector optimization schemes such as epilayer thickness and dopant conce