Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Pierre-Emmanuel Julien Marc Gaillardon"'
Autor:
Julien Tranchant, Benoit Corraze, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Laurent Cario, Jaafar Ghanbaja, Jury Sandrini, Etienne Janod, Giovanni De Micheli, Marie-Paule Besland
Publikováno v:
ECS Transactions. 75:3-12
The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwiched between TiN electrodes. The device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f0792b5fecd303c073efbc202404fb
https://doi.org/10.1149/07532.0003ecst
https://doi.org/10.1149/07532.0003ecst
Autor:
Jury Sandrini, Maxime Thammasack, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Xifan Tang, Somayyeh Rahimian Omam, Giovanni De Micheli
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015.
Field Programmable Gate Arrays (FPGAs) rely heavily on complex routing architectures. The routing structures use programmable switches and account for a significant share in the total area, delay and power consumption numbers. With the ability of bei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50653c21ee67ed27b4104c026ca1ef46
https://doi.org/10.7873/date.2015.1112
https://doi.org/10.7873/date.2015.1112
Publikováno v:
Disruptive Logic Architectures and Technologies
This book discusses the opportunities offered by disruptive technologies to overcome the economical and physical limits currently faced by the electronics industry. It provides a new methodology for the fast evaluation of an emerging technology from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d000aa6deeb685183aa945dc876c53c7
https://doi.org/10.1007/978-1-4614-3058-2
https://doi.org/10.1007/978-1-4614-3058-2
Autor:
Jean-Philippe Noel, Jean-Michel Portal, Ian O'Connor, Alexandre Levisse, Pierre-Emmanuel Julien Marc Gaillardon, Bastien Giraud, Mathieu Moreau
Publikováno v:
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
IEEE Transactions on Nanotechnology, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
IEEE Transactions on Nanotechnology, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1746032b8d50a82b0de445c071b53c2