Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Pierre Yves Delaunay"'
Publikováno v:
Infrared Technology and Applications XLIII.
Recent advances in superlattice-based infrared detectors have rendered this material system a solid alternative to HgCdTe for dual-band sensing applications. In particular, superlattices are attractive from a manufacturing perspective as the epitaxia
Autor:
Binh-Minh Nguyen, Pierre-Yves Delaunay, Manijeh Razeghi, Edward Kwei Wei Huang, Siamak Abdollahi Pour
Publikováno v:
IEEE Journal of Quantum Electronics. 46:1704-1708
Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaS
Autor:
Pierre-Yves Delaunay, Manijeh Razeghi
Publikováno v:
IEEE Journal of Quantum Electronics. 46:584-588
A long wavelength infrared focal plane array based on Type-II InAs/GaSb superlattices was fabricated and characterized at 80 K. The noise equivalent temperature difference of the array was measured as low as 23 mK $({\rm f}\#={2})$ , for an integrati
Autor:
Meimei Z. Tidrow, Manijeh Razeghi, Vaidya Nathan, Binh-Minh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Pierre-Yves Delaunay
Publikováno v:
Proceedings of the IEEE. 97:1056-1066
In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (M
Autor:
Binh-Minh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Pierre-Yves Delaunay, Manijeh Razeghi
Publikováno v:
IEEE Journal of Quantum Electronics. 45:157-162
The recent introduction of a M-structure design improved both the dark current and R0 A performances of type-II InAs-GaSb photodiodes. A focal plane array fabricated with this design was characterized at 81 K. The dark current of individual pixels wa
Publikováno v:
IEEE Journal of Quantum Electronics. 44:462-467
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II d
Autor:
Sevag Terterian, Hasan Sharifi, Pierre-Yves Delaunay, Brett Nosho, Mark Roebuck, Rajesh Rajavel
Publikováno v:
SPIE Proceedings.
Autor:
Edward Kwei Wei Huang, Binh-Minh Nguyen, Manijeh Razeghi, Siamak Abdollahi Pour, Pierre-Yves Delaunay
Publikováno v:
SPIE Proceedings.
In recent years, the type-II superlattice (T2SL) material platform has seen incredible growth in the understanding of its material properties which has lead to unprecedented development in the arena of device design. Its versatility in band-structure
Autor:
Binh-Minh Nguyen, Siamak Abdollahi Pour, G. Chen, Simeon Bogdanov, Pierre Yves Delaunay, Paritosh Manukar, Manijeh Razeghi, Edward Kwei Wei Huang
Publikováno v:
SPIE Proceedings.
Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency
Autor:
Siamak Abdollahi Pour, Manijeh Razeghi, Binh-Minh Nguyen, Pierre Yves Delaunay, Simeon Bogdanov, Paritosh Manukar, Edward Kwei Wei Huang
Publikováno v:
SPIE Proceedings.
Type-II InAs/GaSb Superlattice (SL), a system of multi interacting quantum wells was first introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this low dimensional system has drawn a lot of attention for its attractive quantum mechanics p