Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Pierre Masri"'
Selected, peer reviewed papers from the Mediterranean Conference on Innovative Materials and Applications (CIMA 2011), 15 – 17 March 2011, CROWNE Plaza Hotel, held in Beirut, Lebanon
Publikováno v:
Surface Science Reports. 65:111-127
This review is intended to provide a critical and up-to-date survey of the analytical approximation methods that are encountered in interface thermal conductance. Because of the importance of the III-nitride materials for novel technological applicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dac8e6c5872dd797f3a99abda5d2d12
https://doi.org/10.1016/j.surfrep.2010.02.001
https://doi.org/10.1016/j.surfrep.2010.02.001
Autor:
Richard Nader, Mohamad Adnan Alsioufy, F. Niebelschütz, Pierre Masri, Thomas Stauden, Jörg Pezoldt
Publikováno v:
Materials Science Forum. :159-162
Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c077a5bada72ef761090289714858e34
https://doi.org/10.4028/www.scientific.net/msf.645-648.159
https://doi.org/10.4028/www.scientific.net/msf.645-648.159
Autor:
Dmitri V. Kulikov, Jörg Pezoldt, Pierre Masri, F. Niebelschütz, Richard Nader, Vladimir Kharlamov, Yurii V. Trushin
Publikováno v:
physica status solidi c. 7:141-144
The deposition of Germanium (Ge) prior to the conversion of Si(100) into 3C-SiC(100) results in changes of the structure and surface morphology of the formed silicon carbide layer. First of all it reduces the thickness of the 3C-SiC layer grown durin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4562534b1fc69c2e9e267febc92eff
https://doi.org/10.1002/pssc.200982448
https://doi.org/10.1002/pssc.200982448
Publikováno v:
physica status solidi c. 7:60-63
We present a calculation of the thermal conductance (TC) of the interface between aluminium nitride (AlN) and silicon (Si) and that between AlN and silicon carbide (SiC) with taking into account the detailed phonon spectra of the materials, as obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3da486e66e926a6c0be32d6a2eac707
https://doi.org/10.1002/pssc.200982622
https://doi.org/10.1002/pssc.200982622
Publikováno v:
Journal of Crystal Growth. 311:4665-4669
AlN thin films were grown at a temperature of 720 °C on (1 1 1) silicon carbide buffer layer deposited in turn on (1 1 1) silicon substrate by introducing Ge at the SiC/Si interface. The growth method used is the solid source molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8551130f69d10ff272c34b940232ca0
https://doi.org/10.1016/j.jcrysgro.2009.08.034
https://doi.org/10.1016/j.jcrysgro.2009.08.034
Autor:
E. Moussaed, Jörg Pezoldt, Thomas Stauden, Michel Kazan, Richard Nader, Pierre Masri, M. Niebelschütz
Publikováno v:
Surface and Interface Analysis. 40:1310-1317
The influence of Ge deposition prior to carbon interaction with 3° off-axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high-energy electron diffraction (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b34f677442500bce08b97f47ac65e7b2
https://doi.org/10.1002/sia.2895
https://doi.org/10.1002/sia.2895
Publikováno v:
Materials Science Forum. :465-468
We report on the application of introducing gettering sites as an approach to control some phonons and charge carrier related properties in 4H-SiC epilayer. Helium implantation (at room temperature or 750°C) was first carried out, followed by a prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bda821f53a62f95cbcb2390e1899b4b
https://doi.org/10.4028/www.scientific.net/msf.600-603.465
https://doi.org/10.4028/www.scientific.net/msf.600-603.465
Publikováno v:
Materials Science Forum. :525-528
Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47a48622948ed5e0eda9f89f0d4e0b1
https://doi.org/10.4028/www.scientific.net/msf.600-603.525
https://doi.org/10.4028/www.scientific.net/msf.600-603.525
Autor:
Pierre Masri, Richard Nader, E. Moussaed, Bilal Nsouli, Charbel Zgheib, Michel Kazan, Jörg Pezoldt
Publikováno v:
Materials Science Forum. :533-536
In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This methodology is based on the investigation of growth related parameters. These parameters involve substrate temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d21f324b15d7f6e7c166cec56e3379
https://doi.org/10.4028/www.scientific.net/msf.600-603.533
https://doi.org/10.4028/www.scientific.net/msf.600-603.533