Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Pierre Dusserre"'
Autor:
Daniel Krief, Michel Pluot, Bruno Bouvet, Étienne Martin, Jacques-Henri Max-Cohen, Olivier Perret, Pascal Crépin, Pierre Dusserre, Didier Monchy, Pierre-Régis Martin, Patrick Roignot, Francesca Piccioni
Publikováno v:
Revue Française des Laboratoires. 2004:69-73
Resume LEDA est une organisation non gouvernementale virtuelle destinee a assurer gratuitement des services de Liaison, d'Education, d'aide au Diagnostic et d'Assistance aux professionnels de la sante, locaux ou expatries, travaillant dans des pays m
Autor:
Étienne Martin, Gérard Lizard, Emmanuel Pavageau, Étienne Faure, J M Colas, Pierre Dusserre, Guy Lesec, Fabienne Morlevat, Jacques Saurel, Jean-Philibert Combier, Laurence Dusserre, Patrick Roignot, Erno Baviera, Patrick Le Guilcher
Publikováno v:
Revue Française des Laboratoires. 2004:49-53
Resume L'examen tele-extemporane constitue un bon exemple d'application de la telemedecine en anatomo-cyto-pathologie dans son aspect relevant de la tele-expertise, c'est-a-dire de l'aide a la decision medicale apportee par un medecin a un autre mede
Publikováno v:
Journal of Crystal Growth. 261:590-594
The dewetting technique, based on the application of a gas pressure in order to prevent crystal crucible contact during Bridgman growth, has been applied to the growth of CdTe. After optimization of the set up and growth parameters, two CdTe single c
Autor:
N. Giacometti, Benz M. Fiederle, Ernesto Diéguez, Thierry Duffar, Jean-Claude Launay, Gérald Roosen, Pierre Dusserre
Publikováno v:
Acta Astronautica. 48:157-161
The experiment STS95-Spacehab-AGHF1 has been devoted to the study of the dewetting phenomenon applied to the growth of CdTe:Zn:V. Two samples have been introduced in quartz ampoules and solidified directionally. However, one sample has been grown at
Publikováno v:
Journal of Crystal Growth. 211:434-440
A new crystal growth process, based on the Bridgman method, but with the aim to avoid crystal crucible contact, has been studied and implemented. The principle is to impose a gas pressure at the cold part of the crucible, approximately equal to the h
Publikováno v:
Journal of Crystal Growth. 206:159-165
2″ GaSb single crystals have been grown by the vertical Bridgman method. It is shown that encapsulation by a molten salt is necessary to avoid spurious nucleation and sticking of the crystal on the crucible, both the phenomena being deleterious to
Publikováno v:
Journal of Crystal Growth. :374-378
Solid-liquid interface demarcations have been performed during the growth of GaSb and Ge samples by the vertical Bridgman method. The crucibles were made of boron nitride, silica or carbon based materials. Subsequent metallographies in a plane contai
Autor:
C. Barat, Pierre Dusserre, J.P. Nabot, F. Theodore, J.L. Santailler, N. Giacometti, T. Duffar, B. Angelier, P. Boiton
Publikováno v:
Journal of Crystal Growth. 180:698-710
Two commercial codes, FIDAP and MARC, have been used to model a number of crystal growth processes in collaboration with industrial and research teams. Examples of global and local simulations in the field of heat transfer, hydrodynamics, chemistry a
Publikováno v:
Journal of Crystal Growth. 179:397-409
On the basis of experimental results, it has been considered that semiconductors can present very high contact angles on crucible materials, due to slight amounts of pollution by residual gases. This phenomena is used to explain the de-wetting of sem
Publikováno v:
Journal of Crystal Growth. 179:356-362
Full encapsulation of liquid semiconductors during Bridgman growth helps to improve the crystal quality by decreasing the nucleation of grains and the dislocation density. An experimental and theoretical study has been undertaken in order to better u