Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Pierre Chia"'
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
Today, applications like data center/cloud, mobility and Internet of Things (IoT) are key market drivers for semiconductor industry. To meet the requirements of next generation Information and Communication Technology (ICT) systems, the packaging tec
Autor:
Sada Patil, Jie Xue, Delacruz Javier A, Li Li, Jack Hellings, Marius Voicu, Mohan Nagar, Mark Coor, Bill Isaacson, Paul Ton, Pierre Chia, Ross Havens
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
To meet the requirements of the next high generation high-performance networking switches and routers, system integration based on the Three-dimensional (3D) System-in-Package (SiP) technology is being studied and developed. In this paper, we report
Autor:
Min Suk Suh, Nam Seog Kim, Pierre Chia, Ho Young Son, Chenglin Wu, Li Li, Peng Su, Jang-Hi Im, Paul S. Ho, Tengfei Jiang, Rui Huang
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
In this work, the effect of high temperature storage (HTS) on the stress in and around Cu TSVs in 3D stacked chips is studied by scanning white beam x-ray microdiffraction. The x-ray microdiffraction measurements were conducted on different die level
Autor:
Pierre Chia, Jae-Sung Oh, Nam-Seog Kim, Jay Im, Rui Huang, Chenglin Wu, Kwang-Yoo Byun, Paul S. Ho, Tengfei Jiang, Li Li, Peng Su, Xi Liu, Ho-Young Son
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
The characteristics of thermal stresses in a five-stacked memory dies containing through-silicon vias (TSVs) were measured with synchrotron x-ray microdiffraction. The measurements were performed in and around the Cu vias for both the top and bottom
Publikováno v:
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In IIRW 2010, we presented new reliability stress methods (a.k.a. one ROW fast access) for dynamic random access memory (DRAM) hot-carrier injection (HCI) robustness qualifications [3]. In IRPS 2011, we presented the systematic simulation methodology
Publikováno v:
2011 International Reliability Physics Symposium.
Estimating operating lifetime is critical for dynamic random access memory (DRAM) components with hot-carrier injection (HCI). Using DC device lifetime to substitute a component lifetime can be too pessimistic and can disqualify good DRAM products. T
Autor:
Sophie Trouillet-Assant, Amélie Massardier-Pilonchery, Barbara Charbotel, Nicolas Guibert, Jean-Baptiste Fassier, Muriel Rabilloud, Chloe Albert Vega, Antonin Bal, Julie Anne Nazare, Pascal Fascia, Adèle Paul, Constance d Aubarede, Virginie Pitiot, Matthieu Lahousse, André Boibieux, Djamila Makhloufi, Chantal Simon, Mary Anne Trabaud, François Gueyffier, Jérôme Adnot, Dulce Alfaiate, Alain Bergeret, Florent Bonnet, Gaëlle Bourgeois, Florence Brunel-Dalmas, Eurydice Caire, Pierre Chiarello, Laurent Cotte, Constance d'Aubarede, François Durupt, Escuret Vanessa, Fascia Pascal, Fassier Jean-Baptiste, Fontaine Juliette, Gaillot-Durand Lucie, Gaymard Alexandre, Gillet Myriam, Godinot Matthieu, Gueyffier François, Guibert Nicolas, Josset Laurence, Lahousse Matthieu, Lina Bruno, Lozano Hélène, Makhloufi Djamila, Massardier-Pilonchéry Amélie, Milon Marie-Paule, Moll Frédéric, Morfin Florence, Narbey David, Nazare Julie-Anne, Oria Fatima, Paul Adèle, Perry Marielle, Pitiot Virginie, Prudent Mélanie, Rabilloud Muriel, Samperiz Audrey, Schlienger Isabelle, Simon Chantal, Trabaud Mary-Anne, Trouillet-Assant Sophie
Publikováno v:
BMJ Open, Vol 10, Iss 11 (2020)
Introduction The COVID-19 pandemic caused by SARS-CoV-2 threatens global public health, and there is an urgent public health need to assess acquired immunity to SARS-CoV-2. Serological tests might provide results that can be complementary to or confi
Externí odkaz:
https://doaj.org/article/27a0bdd0bdcc440393b091498754e589