Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Autor: Stephane Plumeri, Melanie Osmond, Pierre Magnan, Serena Rizzolo, Romain Molina, Franck Corbière, Timothe Allanche, Jean-Pierre Baudu, Sylvain Girard, Philippe Paillet, Vincent Goiffon, Cyprien Muller, Aziouz Chabane, Jean-Reynald Macé, Pierre Burnichon, Hortense Desjonqueres, Céline Monsanglant-Louvet, Aziz Boukenter

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.111-119. ⟨10.1109/TNS.2018.2884037⟩
IEEE Transactions on Nuclear Science, 2019, 66 (1), pp.111-119. ⟨10.1109/TNS.2018.2884037⟩
Nuclear and Space Radiation Effects Conference (NSREC 2018)
Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3
Radiation Effects on Optoelectronic Detectors (CNES Workshop)
Radiation Effects on Optoelectronic Detectors (CNES Workshop), Nov 2018, Toulouse, France. pp.1-31

International audience; The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partial

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe2eeb6cf4514f313f8e9eb03a5b3d6b
https://hal-ujm.archives-ouvertes.fr/ujm-01964631/file/Rizzolo_22819.pdf