Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Pierre Ferret"'
Autor:
Carsten Richter, Vladimir M. Kaganer, Armelle Even, Amélie Dussaigne, Pierre Ferret, Frédéric Barbier, Yves-Matthieu Le Vaillant, Tobias U. Schülli
Publikováno v:
Physical Review Applied. 18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61afa94b9735f099621d964e2688e52a
https://doi.org/10.1103/physrevapplied.18.064015
https://doi.org/10.1103/physrevapplied.18.064015
Autor:
Pierre Ferret, Yann Mazel, Guy Feuillet, Mrad Mrad, Joël Kanyandekwe, Matthew Charles, Emmanuel Nolot, Marc Veillerot
Publikováno v:
Journal of Crystal Growth. 507:139-142
We have shown that in an AIXTRON Close Coupled Showerhead MOVPE system, InAlN layers are strongly contaminated with gallium, giving increasing contamination when thicker GaN layers are grown below the InAlN. We have also shown that as the gallium con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7782f0a15633f8edb4ef39e349789bb2
https://doi.org/10.1016/j.jcrysgro.2018.10.039
https://doi.org/10.1016/j.jcrysgro.2018.10.039
Autor:
Agnès Trassoudaine, Dominique Castelluci, Catherine Bougerol, Mohammed Zeghouane, Thomas W. Cornelius, Pierre Ferret, Geoffrey Avit, Ariane Meguekam-Sado, Olivier P. Thomas, Yamina André, Thierry Taliercio, Eric Tournié, Evelyne Gil, Damien Salomon
Publikováno v:
CrystEngComm
CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
CrystEngComm, Royal Society of Chemistry, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
CrystEngComm, Royal Society of Chemistry, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
Well-ordered and vertically aligned InN nanorods with high aspect ratios are synthesized by hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach. The growth occurs through the apertures of a SiNx masked Ga-polar GaN/c-Al2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc2abca83c8f39f76ccdea8b2dcf5c99
https://doi.org/10.1039/c9ce00161a
https://doi.org/10.1039/c9ce00161a
Autor:
Agnès Trassoudaine, Dominique Castelluci, Geoffrey Avit, Catherine Bougerol, Jihen Jridi, Philip A. Shields, Pierre Ferret, Evelyne Gil, Mohammed Zeghouane, Yamina André, Vladimir G. Dubrovskii, Pierre-Marie Coulon
Publikováno v:
Zeghouane, M, André, Y, Avit, G, Jridi, J, Bougerol, C, Coulon, P, Ferret, P, Castelluci, D, Gil, E, Shields, P, Dubrovskii, V G & Trassoudaine, A 2020, ' Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates ', Nano Futures, vol. 4, no. 2, 025002, pp. 1-7 . https://doi.org/10.1088/2399-1984/ab8450
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1904517e67607397c508259c3a51787
https://purehost.bath.ac.uk/ws/files/205005931/NANOF_100268_.pdf
https://purehost.bath.ac.uk/ws/files/205005931/NANOF_100268_.pdf
Autor:
Geoffrey Avit, Pierre Ferret, Agnès Trassoudaine, Dominique Castelluci, Mohammed Zeghouane, Pierre Disseix, Eric Tournié, Yamina André, Thierry Taliercio, Joël Leymarie, Evelyne Gil
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
International audience; The control of the morphology of InN nanorods, which remains challenging due to complex mechanisms involved in the growth process, is essential for the next generation of nano-and optoelectronic devices. In this paper, we repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::728b1585a5274376d7b6ba75953e807a
https://hal.science/hal-02532717/document
https://hal.science/hal-02532717/document
Autor:
Jean-Pierre Ferret Ferret
Entre Poitou et Lot-et-Garonne, un thriller en Nouvelle-Aquitaine!Christophe, cycliste amateur poitevin, est renversé par un chauffard qui prend la fuite. Galo, un jeune Gitan, seul témoin, prétend que l'automobiliste a foncé délibérément sur
Autor:
Agnès Trassoudaine, Pierre Ferret, Yamina André, Vladimir G. Dubrovskii, Dominique Castelluci, Geoffrey Avit, Catherine Bougerol, Mohammed Zeghouane, Yoann Robin, Evelyne Gil, Hiroshi Amano
Publikováno v:
Nanotechnology
Nanotechnology, 2019, 30 (4), pp.044001. ⟨10.1088/1361-6528/aaec39⟩
Nanotechnology, Institute of Physics, 2019, 30 (4), pp.044001. ⟨10.1088/1361-6528/aaec39⟩
Nanotechnology, 2019, 30 (4), pp.044001. ⟨10.1088/1361-6528/aaec39⟩
Nanotechnology, Institute of Physics, 2019, 30 (4), pp.044001. ⟨10.1088/1361-6528/aaec39⟩
Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-Al2O3 templates by catalyst-free hydride vapor phase epitaxy using InCl3 and GaCl as group III element precursors. The influence of the partial pressures on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ce12f1425f2e5f5172eee7b4b10d836
https://hal.science/hal-02025949
https://hal.science/hal-02025949
Autor:
Pierre Ferret, Ivan-Christophe Robin, Gautier Laval, Amélie Dussaigne, F. Levy, Olivier Ledoux, David Sotta, Armelle Even, Eric Guiot
Publikováno v:
Gallium Nitride Materials and Devices XII.
InGaN based LEDs are known to be very efficient in the blue range. However, although InGaN can theoretically cover all visible range, quantum efficiency drops when emission wavelength emission is increased due to quantum confined Stark effect. Furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d6499b541388d99fced8f1013f6938a
https://doi.org/10.1117/12.2252290
https://doi.org/10.1117/12.2252290
Autor:
Olivier Ledoux, Ivan-Christophe Robin, G. Laval, Pierre Ferret, A. Even, Amelie Dussaigne, Eric Guiot, Francois Levy, David Sotta
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
Applied Physics Letters, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
Applied Physics Letters, American Institute of Physics, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
Applied Physics Letters, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
International audience; The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with different a lattice parameters ranging from 3.190 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c201e973b4b420e53e3ff61560a9df9
https://hal-cea.archives-ouvertes.fr/cea-02202433
https://hal-cea.archives-ouvertes.fr/cea-02202433