Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Piero Olivo"'
Autor:
Andrea Baroni, Artem Glukhov, Eduardo Pérez, Christian Wenger, Enrico Calore, Sebastiano Fabio Schifano, Piero Olivo, Daniele Ielmini, Cristian Zambelli
Publikováno v:
Frontiers in Neuroscience, Vol 16 (2022)
One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options. Tools like machine learning (ML) and deep neur
Externí odkaz:
https://doaj.org/article/fc722f8ddb564ece8c127eb70dfd8593
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 99-104 (2020)
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first
Externí odkaz:
https://doaj.org/article/9f5e9c5e9ca14ea3b767db5b44a4bb72
Autor:
Eduardo Perez, Cristian Zambelli, Mamathamba Kalishettyhalli Mahadevaiah, Piero Olivo, Christian Wenger
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 740-747 (2019)
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays is currently a challenging task due to several threats like the post-algorithm instability occurring after the levels placement, the limited endurance, and the
Externí odkaz:
https://doaj.org/article/f6fb4f9b82524f629c1c4a2cc7d231a3
Publikováno v:
Micromachines, Vol 12, Iss 7, p 759 (2021)
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology. However, the paradigm change represented by the 3D
Externí odkaz:
https://doaj.org/article/286e55ee0932429b9bb4620627223058
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 64-68 (2017)
In this paper, the set operation of HfO2 based 1T-1R arrays is studied by applying incremental step pulse with verify algorithm. To evaluate the impact of the voltage step increment on the conduction mechanism of filaments, the voltage increments bet
Externí odkaz:
https://doaj.org/article/d6b0e15b50654b23b47630b9e9fb8082
Publikováno v:
Computers, Vol 6, Iss 3, p 27 (2017)
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs)
Externí odkaz:
https://doaj.org/article/eae3d4734ab44773bb5388435f2f0455
Autor:
Piergiulio Mannocci, Andrea Baroni, Enrico Melacarne, Cristian Zambelli, Piero Olivo, Eduardo Perez, Christian Wenger, Daniele Ielmini
Publikováno v:
IEEE Nanotechnology Magazine. 16:4-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15dacb895cfbb931a7e55ee9f873d78c
https://doi.org/10.1109/mnano.2022.3141515
https://doi.org/10.1109/mnano.2022.3141515
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:486-493
The storage systems relying on the 3D NAND Flash technology require an extensive modeling of their reliability in different working corners. This enables the deployment of system-level management routines that do not compromise the overall performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d98359a5c5dad110c738ca8cdd3369c0
https://doi.org/10.1109/tdmr.2021.3108941
https://doi.org/10.1109/tdmr.2021.3108941
Autor:
Piergiulio Mannocci, Andrea Baroni, Enrico Melacarne, Cristian Zambelli, Piero Olivo, Eduardo Perez, Christian Wenger, Daniele Ielmini
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5b3fc7e3337ad0c3f5da8b8c4ff5b6
https://doi.org/10.1109/iscas48785.2022.9937653
https://doi.org/10.1109/iscas48785.2022.9937653
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 99-104 (2020)
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02e537bc3a80e54def13baf1c9ae28af
https://ieeexplore.ieee.org/document/8956089/
https://ieeexplore.ieee.org/document/8956089/