Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Piero, Mazzolini"'
Autor:
Charlotte Wouters, Musbah Nofal, Piero Mazzolini, Jijun Zhang, Thilo Remmele, Albert Kwasniewski, Oliver Bierwagen, Martin Albrecht
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011110-011110-10 (2024)
In this paper, we employ in situ transmission electron microscopy to study the disorder–order phase transition from amorphous Ga2O3 to γ-Ga2O3 and then to β-Ga2O3. The in situ studies are complemented by ex situ annealing experiments, of which th
Externí odkaz:
https://doaj.org/article/870e42561c5b419abbe9c1b7ed5e8ad1
Publikováno v:
APL Materials, Vol 8, Iss 3, Pp 031110-031110-10 (2020)
Sources of suboxides, providing several advantages over metal sources for the molecular beam epitaxy (MBE) of oxides, are conventionally realized by decomposing the corresponding oxide charge at extreme temperatures. By quadrupole mass spectrometry o
Externí odkaz:
https://doaj.org/article/fe4c9f6abec3498c9db77e024e91e7ed
Autor:
Antonella Parisini, Piero Mazzolini, Maura Pavesi, Andreas Falkenstein, Alessio Bosio, Carmine Borelli, Vivien Peltason, Benjamin M. Jantzen, Markus R. Wagner, Matteo Bosi, Luca Seravalli, Andrea Ardenghi, Oliver Bierwagen, Francesco Mezzadri, Manfred Martin, Andrea Baraldi, Roberto Fornari
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93fd20cd424b2aab65ec05d313ed4ce
https://doi.org/10.1117/12.2666004
https://doi.org/10.1117/12.2666004
Autor:
Antonella Parisini, Piero Mazzolini, Matteo Bosi, Luca Seravalli, Alessio Bosio, Roberto Fornari
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047522dee1c7d052e17e0c44abf8c56c
https://doi.org/10.1117/12.2665469
https://doi.org/10.1117/12.2665469
Publikováno v:
physica status solidi (b). 260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8bfc62425f1f9733d7bbdf9c9d9007
https://doi.org/10.1002/pssb.202200535
https://doi.org/10.1002/pssb.202200535
Autor:
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien‐Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz
Publikováno v:
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a87a2bd887303dc342a2f7671d87550a
Autor:
Laura E, Ratcliff, Takayoshi, Oshima, Felix, Nippert, Benjamin M, Janzen, Elias, Kluth, Rüdiger, Goldhahn, Martin, Feneberg, Piero, Mazzolini, Oliver, Bierwagen, Charlotte, Wouters, Musbah, Nofal, Martin, Albrecht, Jack E N, Swallow, Leanne A H, Jones, Pardeep K, Thakur, Tien-Lin, Lee, Curran, Kalha, Christoph, Schlueter, Tim D, Veal, Joel B, Varley, Markus R, Wagner, Anna, Regoutz
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(37)
Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::13ea3a59708623d810b3971c04d9cbe2
https://pubmed.ncbi.nlm.nih.gov/35866491
https://pubmed.ncbi.nlm.nih.gov/35866491
Autor:
Kelvin H. L. Zhang, Wenqiao Han, Choon Y. Haw, Jia Ye Zhang, Piero Mazzolini, Rui Wu, Dongchen Qi, Oliver Bierwagen, Lang Chen, Xuan Liang, Haiwan Xu
Publikováno v:
ACS Applied Electronic Materials. 3:1834-1841
Delafossite CuFeO2 is a p-type oxide semiconductor with a band gap of ∼1.5 eV, which has attracted great interests for applications in solar energy harvesting and oxide electronics. However, there are still some discrepancies in the literature rega
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908f87ccbd5a496e2694ebdf71200933
https://doi.org/10.1021/acsaelm.1c00090
https://doi.org/10.1021/acsaelm.1c00090
Autor:
Linus P. Grote, Oliver Bierwagen, Markus R. Wagner, Vivien F. S. Peltason, Roland Gillen, Roberto Fornari, Benjamin M. Janzen, Piero Mazzolini, Janina Maultzsch
Publikováno v:
Journal of Materials Chemistry C. 9:14175-14189
Gallium oxide (Ga2O3) is an ultra-wide bandgap material, which has recently attracted widespread attention for holding promising applications in power electronics and solar blind UV photodetectors, outclassing GaN or SiC in terms of a larger bandgap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7202d13711dd069eb545561c687e4c5
https://doi.org/10.1039/d1tc03500b
https://doi.org/10.1039/d1tc03500b
Autor:
Andrea Ardenghi, Oliver Bierwagen, Georg Hoffmann, Andreas Falkenstein, Piero Mazzolini, Jonas Lähnemann, Manfred Martin
The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) are addressed by using its solid suboxide, SiO, as an alternative source material in a conventional effusion cell. Line-of-sight q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6427e774129f6cbe507294abc8221e5b
http://arxiv.org/abs/2202.05762
http://arxiv.org/abs/2202.05762