Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Piagge, R."'
Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 {\deg}C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a prefer
Externí odkaz:
http://arxiv.org/abs/1705.04071
Autor:
Merlo, L., Rossetto, I., Cerati, L., Ghidini, G., Milani, A., Toia, F., Piagge, R., Di Biccari, L., Gevinti, E., Croce, G., Andreini, A.
Publikováno v:
In Microelectronics Reliability September 2019 100-101
Autor:
Ghidini, G., Galbiati, N., Scozzari, C., Sebastiani, A., Piagge, R., Del Vitto, A., Comite, P., Alessandri, M., Tessariol, P., Baldi, I., Moltrasio, E., Mascellino, E.
Publikováno v:
In Microelectronic Engineering 2011 88(7):1182-1185
Autor:
Alessandri, M., Del Vitto, A., Piagge, R., Sebastiani, A., Scozzari, C., Wiemer, C., Lamagna, L., Perego, M., Ghidini, G., Fanciulli, M.
Publikováno v:
In Microelectronic Engineering 2010 87(3):290-293
Publikováno v:
In Applied Surface Science 2006 253(1):17-20
Akademický článek
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Autor:
Alessandri M, Del Vitto A, Piagge R, Sebastiani A, Scozzari C, Wiemer C, Lamagna L, Perego M, Ghidini G, Fanciulli M
Publikováno v:
Microelectronic engineering 87 (2010): 290–293.
info:cnr-pdr/source/autori:Alessandri M, Del Vitto A, Piagge R, Sebastiani A, Scozzari C, Wiemer C, Lamagna L, Perego M, Ghidini G, Fanciulli M/titolo:Rare earth-based high-k materials for non-volatile memory applications/doi:/rivista:Microelectronic engineering/anno:2010/pagina_da:290/pagina_a:293/intervallo_pagine:290–293/volume:87
info:cnr-pdr/source/autori:Alessandri M, Del Vitto A, Piagge R, Sebastiani A, Scozzari C, Wiemer C, Lamagna L, Perego M, Ghidini G, Fanciulli M/titolo:Rare earth-based high-k materials for non-volatile memory applications/doi:/rivista:Microelectronic engineering/anno:2010/pagina_da:290/pagina_a:293/intervallo_pagine:290–293/volume:87
A study of a La-based high-k oxide to be employed as active dielectric in future scaled memory devices is presented. The focus will be held on LaxZr1-xO2-delta(x = 0.25) compound. In order to allow the integration of this material, its chemical inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::b58560aae7293b91dcc43344cbb5ee85
http://www.cnr.it/prodotto/i/36574
http://www.cnr.it/prodotto/i/36574
Autor:
Del Vitto A, Piagge R, Ravizza E, Spadoni S, Sebastiani A, Scozzari C, Wiemer C, Ghidini G, Alessandri M, Fanciulli M, Maes JW, Verghese M
Publikováno v:
218th ECS Meeting: E5-High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics, Las Vegas, USA, 2010
info:cnr-pdr/source/autori:Del Vitto A, Piagge R, Ravizza E, Spadoni S, Sebastiani A, Scozzari C, Wiemer C, Ghidini G, Alessandri M, Fanciulli M, Maes JW, Verghese M,/congresso_nome:218th ECS Meeting: E5-High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics/congresso_luogo:Las Vegas, USA/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:Del Vitto A, Piagge R, Ravizza E, Spadoni S, Sebastiani A, Scozzari C, Wiemer C, Ghidini G, Alessandri M, Fanciulli M, Maes JW, Verghese M,/congresso_nome:218th ECS Meeting: E5-High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics/congresso_luogo:Las Vegas, USA/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::7dadf388fc2452a42f8f4e6ed001df05
http://www.cnr.it/prodotto/i/87005
http://www.cnr.it/prodotto/i/87005
Publikováno v:
Applied surface science 253 (2006): 17–20.
info:cnr-pdr/source/autori:Banerjee, S; Ferrari, S; Piagge, R; Spadoni, S/titolo:Electron density profile at the interface of SiO2%2FSi(001)/doi:/rivista:Applied surface science/anno:2006/pagina_da:17/pagina_a:20/intervallo_pagine:17–20/volume:253
info:cnr-pdr/source/autori:Banerjee, S; Ferrari, S; Piagge, R; Spadoni, S/titolo:Electron density profile at the interface of SiO2%2FSi(001)/doi:/rivista:Applied surface science/anno:2006/pagina_da:17/pagina_a:20/intervallo_pagine:17–20/volume:253
In this report we present grazing incidence X-ray reflectivity (GIXR) study Of SiO2/Si(001) system. We have analysed the X-ray reflectivity data using recursive formalism based on matrix method and distorted wave Born approximation (DWBA). From the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::bc66e45e5c741fd4f38afad4c4c76cfb
http://www.cnr.it/prodotto/i/120
http://www.cnr.it/prodotto/i/120