Zobrazeno 1 - 10
of 85 342
pro vyhledávání: '"Physical Vapor Deposition"'
Autor:
Zaidan, Andi1,2 zaidan@fst.unair.ac.id, Ivanova, Vladislava3 ivanova_vl@uctm.edu, Petkov, Plamen3
Publikováno v:
Inorganics. Aug2024, Vol. 12 Issue 8, p209. 15p.
Autor:
Lin, Chia-Ming1 (AUTHOR) p98121039@gs.ncku.edu.tw, Chen, Shang-Liang1 (AUTHOR) slchen@mail.ncku.edu.tw
Publikováno v:
Mathematics (2227-7390). Sep2024, Vol. 12 Issue 17, p2688. 25p.
Autor:
CALINESCU, V. M.1, OPROESCU, M.2, IANA, V. G.2, DUCU, C. M.3, SCHIOPU, A.-G.3 gabriela.schiopu@upb.ro
Publikováno v:
Archives of Metallurgy & Materials. 2024, Vol. 69 Issue 2, p535-540. 6p.
Autor:
Aslanidis, Evangelos1,2 (AUTHOR) evaaslani@central.ntua.gr, Sarigiannidis, Savvas1 (AUTHOR) sansarigiannidis@mail.ntua.gr, Skotadis, Evangelos1 (AUTHOR) evskotad@central.ntua.gr, Tsoukalas, Dimitris1 (AUTHOR) dtsouk@central.ntua.gr
Publikováno v:
Materials (1996-1944). Apr2024, Vol. 17 Issue 7, p1522. 12p.
Autor:
Atmane, Soumya, Alexandre, Maroussiak, Caillard, Amaël, Thomann, Anne-Lise, Kateb, Movaffaq, Gudmundsson, Jón Tómas, Brault, Pascal
We present a comparative study of copper film growth with a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiP-IMS), and bipolar HiPIMS, through molecular dynamics simulations. Exp
Externí odkaz:
http://arxiv.org/abs/2409.01049
Autor:
Patel, S., Faltermeier, T., Puri, S., Rodriguez, R., Reynolds, K., Davari, S., Churchill, H. O. H., Borys, N. J., Nakamura, H.
We present strain tuning of excitonic emission in monolayer MoSe$_2$ by using a high-temperature physical vapor deposition (PVD). The use of two amorphous substrates, Si$_{3}$N$_{4}$ and SiO$_{2}$, provides two setpoints to induce distinct amounts of
Externí odkaz:
http://arxiv.org/abs/2408.15469
Autor:
Fan, Haolong1 (AUTHOR), He, Xiaodong1 (AUTHOR), Gao, Jin1 (AUTHOR), Song, Guangping1 (AUTHOR), Zheng, Yongting1 (AUTHOR), Zhu, Chuncheng2 (AUTHOR), Bai, Yuelei1 (AUTHOR) baiyl@hit.edu.cn
Publikováno v:
Journal of the American Ceramic Society. Nov2023, Vol. 106 Issue 11, p6413-6424. 12p. 1 Diagram, 2 Charts, 7 Graphs.
Autor:
Huang, Tianyi, Lin, Sen, Zou, Jingyi, Wang, Zexiao, Zhong, Yibai, Li, Jingwei, Wang, Ruixuan, Wang, Han, Li, Qing, Xu, Min, Shen, Sheng, Zhang, Xu
Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize high-quality Te
Externí odkaz:
http://arxiv.org/abs/2404.14681